Random Circuit Breaker Network Model for Unipolar Resistance Switching

Abstract

The random circuit breaker network model is proposed for unipolar resistance switching behavior. This model describes reversible dynamic processes involving two quasi‐metastable states. The formation and rupture of conducting channels (see figure) in the polycrystalline TiO2 thin films may be analyzed by the self organized avalanche process in the random circuit breaker network model.

A memristor random circuit breaker model accounting for stimulus thermal accumulation

“…Due to the lack of integration of time and thermal parameters, the existing RCB models [5,6,7,11] are quite insufficient to emulate the evolution dynamics of filament under pulsing during the set transition, rendering a significant degeneration of the model accuracy. To improve the RCB model accuracy and expand the applications of the original RCB model, this paper integrates the time and thermal variables into the optimized model by introducing the thermal-driven switching rule and equivalent thermal circuits.…”

“…Although the underlying physical mechanism for the resistive change is still under debate, the formation and rupture of conductive filaments composed of oxygen vacancies and/or metal precipitates are widely acknowledged to be responsible for the resistive switching dynamics [2,4]. In order to explore the filament formation/ rupture characteristics, several filamentary models have been proposed [5,6,7]. Among them, a random circuit breaker (RCB) model [5] was proposed to explain the reversible resistive switching (RS) in the TiO 2 based RRAM and have demonstrated its validity on explaining the RS phenomena, e.g.…”

“…In order to explore the filament formation/ rupture characteristics, several filamentary models have been proposed [5,6,7]. Among them, a random circuit breaker (RCB) model [5] was proposed to explain the reversible resistive switching (RS) in the TiO 2 based RRAM and have demonstrated its validity on explaining the RS phenomena, e.g. wide distribution of SET/RESET voltage [8], stochastic switching [9], resistive state variability [10,11].…”

“…To improve the RCB model accuracy and expand the applications of the original RCB model, this paper integrates the time and thermal variables into the optimized model by introducing the thermal-driven switching rule and equivalent thermal circuits. Compared with the other RCB models [5,6,7,11], both the set and reset transitions of the circuit breaker is assumed to be controlled by its local temperature. This assumption makes the optimized model capable to simulate not only the general features of RRAM such as electroforming, set and reset operations, but also explain effectively the new RRAM features arising from the pulse operations.…”

“…In the original RCB model [5], the switching of the circuit breaker is assumed to be only dependent on the absolute value of voltage drop across each breaker, denoted as Áv. When Áv > V on , the off-state breaker switches to on-state.…”