Stochastic modeling hysteresis and resistive switching in bipolar oxide-based memory

Makarov, Alexander; Sverdlov, Viktor; Selberherr, S.

doi:10.1109/sispad.2010.5604517

Cited by 5 publications

(4 citation statements)

References 25 publications

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“…Perpendicular cells with an interface-induced anisotropy show potential, but still require a reduction of damping and an increase of thermal stability [17]. The in-plane MTJs exhibit a high thermal stability, but still require a reduction of the critical current density [17].…”

Section: Spintronic Memorymentioning

confidence: 99%

“…The simulations show that, while preserving all the advantages of the first generation structure, such as fast switching, high thermal stability factor, and very narrow distribution of switching times, the second generation of the free layer can be easier fabricated and offers a higher potential for STT-MRAM performance optimization. A very narrow distribution of switching times of composite structures is useful not only for application in an STT-MRAM memory cell, but also for magnetic sensors [17].…”

Section: Spintronic Memorymentioning

confidence: 99%

“…Dependences are shown for short axes of 10 nm (first generation) and 15 nm (second generation) length. Each point is a result of statistical averaging with respect to 30 different realizations of the switching process [17].…”

Section: Spintronic Memorymentioning

confidence: 99%

See 2 more Smart Citations

CMOS-compatible spintronic devices: a review

Makarov¹,

Windbacher²,

Sverdlov³

et al. 2016

Semicond. Sci. Technol.

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For many decades CMOS devices have been successfully scaled down to achieve higher speed and increased performance of integrated circuits at lower cost. Today's charge-based CMOS electronics encounters two major challenges: power dissipation and variability. Spintronics is a rapidly evolving research and development field, which offers a potential solution to these issues by introducing novel 'more than Moore' devices. Spin-based magnetoresistive random-access memory (MRAM) is already recognized as one of the most promising candidates for future universal memory. Magnetic tunnel junctions, the main elements of MRAM cells, can also be used to build logic-in-memory circuits with non-volatile storage elements on top of CMOS logic circuits, as well as versatile compact on-chip oscillators with low power consumption. We give an overview of CMOS-compatible spintronics applications. First, we present a brief introduction to the physical background considering such effects as magnetoresistance, spin-transfer torque (STT), spin Hall effect, and magnetoelectric effects. We continue with a comprehensive review of the state-of-the-art spintronic devices for memory applications (STT-MRAM, domain wallmotion MRAM, and spin-orbit torque MRAM), oscillators (spin torque oscillators and spin Hall nano-oscillators), logic (logic-in-memory, all-spin logic, and buffered magnetic logic gate grid), sensors, and random number generators. Devices with different types of resistivity switching are analyzed and compared, with their advantages highlighted and challenges revealed. CMOScompatible spintronic devices are demonstrated beginning with predictive simulations, proceeding to their experimental confirmation and realization, and finalized by the current status of application in modern integrated systems and circuits. We conclude the review with an outlook, where we share our vision on the future applications of the prospective devices in the area.

show abstract

Section: Spintronic Memorymentioning

confidence: 99%

Section: Spintronic Memorymentioning

confidence: 99%

See 1 more Smart Citation

CMOS-compatible spintronic devices: a review

Makarov¹,

Windbacher²,

Sverdlov³

et al. 2016

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…This switching behavior leads to a decrease of the switching energy barrier, while preserving the thermal stability. The reduction of the switching time depending on geometry parameters is investigated in (31), (32). It is shown that a structure with a recording layer composed of ellipses with the axes a/2 and b inscribed into a rectangle a > b is characterized by a switching time similar to the one in a previously considered structure with a composite recording layer, without sacrificing thermal stability.…”

Section: Spin Transfer Torque Magnetic Random Access Memorymentioning

confidence: 99%

(Invited) Spin-Based Silicon and CMOS-Compatible Devices

Sverdlov

Selberherr

2015

ECS Trans.

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Silicon, the main material of microelectronics, is attractive for extending the functionality of MOSFETs by using the electron spin. However, spin lifetime decay in the silicon-on-insulator transistor channel is a potential threat to spin-driven devices using silicon. We predict a giant enhancement of the electron spin lifetime in silicon thin films by applying uniaxial mechanical stress. The advantage of this proposal is that stress techniques are already routinely used in semiconductor industry to enhance the electron and hole mobility, respectively. The spin manipulation in silicon by purely electrical means is a challenge because of a relatively weak coupling of the electron spin to the electric field through an effective gate voltage dependent spin-orbit interaction. In contrast, the coupling between the spin orientation and charge current is much stronger in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS-compatible and possesses all properties required for universal memory. We demonstrate a significant improvement of one of the critical MRAM characteristics, the switching time, by specially designing the recording layer. Finally, by using MRAM arrays we discuss a realization of an intrinsic non-volatile logic-inmemory architecture suitable for future low-power electronics.

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Review of physics-based compact models for emerging nonvolatile memories

Chen

Wang

et al. 2017

J Comput Electron

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Stochastic modeling hysteresis and resistive switching in bipolar oxide-based memory

Cited by 5 publications

References 25 publications

CMOS-compatible spintronic devices: a review

CMOS-compatible spintronic devices: a review

(Invited) Spin-Based Silicon and CMOS-Compatible Devices

Review of physics-based compact models for emerging nonvolatile memories

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