N2 as carrier gas: an alternative to H2 for enhanced epitaxy of Si, SiGe and SiGe:C

Meunier-Beillard, P.; Caymax, Matty; Nieuwenhuysen, Kris Van; Doumen, Geert; Brijs, Bert; Hopstaken, M; Geenen, Luc; Vandervorst, Wilfried

doi:10.1016/j.apsusc.2003.08.088

Cited by 38 publications

(36 citation statements)

References 13 publications

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“…Si growth using silane at lower temperatures has already been described in the literature [8]. In order to obtain a decent layer quality at temperatures below 600 1C, growth rates need to be reduced below a critical flow to form smooth layers [9].…”

Section: Classical Si Precursors: Dcs and Silanementioning

confidence: 98%

See 1 more Smart Citation

Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane

Vincent

Loo

Vandervorst

et al. 2010

Journal of Crystal Growth

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Section: Classical Si Precursors: Dcs and Silanementioning

confidence: 98%

“…Activation energy is determined at 51 kcal/mol, which is comparable with activation energies of Si growth using silane with H 2 as the carrier gas reported in Ref. [8].…”

Section: Trisilane-an Uncommon Growth Rate Dependency On Temperaturementioning

confidence: 99%

Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane

Vincent

Loo

Vandervorst

et al. 2010

Journal of Crystal Growth

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“…This H passivation comes from the precursor gases and from the H2 carrier gas. The low H partial pressure in the SiH4/N2 case results then in a higher Si component deposition rate than SiH4/H2 case [7]. On the other hand, in the Si3H8/H2 case, although H2 is used as carrier gas, the Si component deposition rate is much higher than for the SiH4/H2 case even at 500 °C (Fig.…”

Section: Comparison Of Si1-xgex Growth Kinetics With Different Si Prementioning

confidence: 84%

“…A reduction of the growth temperature leads to a large reduction of the growth rate, which means that sustaining a high throughput becomes very difficult. There are two routes to enhance growth rates: one is the use of N2 as carrier gas instead of H2 [7]. Another one is the use of high order silane precursor gases such as trisilane (Si3H8) [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Si1−xGex growth using Si3H8 by low temperature chemical vapor deposition

et al. 2010

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Low temperature epitaxial growth of group-IV alloys is a key process step to realize the advanced Si-based devices. In order to keep high growth rate below 600 °C, trisilane (Si3H8) was used for their growth as an alternative Si precursor gas. Then, we compared the use of Si3H8 versus SiH4 for Si1-xGex growth in H2 and N2 as carrier gas by low temperature chemical vapor deposition. By using Si3H8 and controlling GeH4 flow rate, Si1-xGex growth with high growth rate and wide range of Ge concentration has been achieved compared to SiH4-based process. The growth rate and Ge concentration in Si1-xGex with Si3H8 grown at 600 °C ranged from 11 to 74nm/min and from 0 to 40%, respectively. The obtained growth rates with Si3H8 are between 1.5 and 6 times higher than for SiH4 at a given growth condition. Si3H8-based in-situ B-and C-doped Si1-xGex growth with high growth rate was also demonstrated.

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“…The Si growth rate is higher if N 2 is used as carrier gas, which has also been observed for other Si precursors. 23 The growth temperature can be reduced to 375…”

Section: Resultsmentioning

confidence: 99%

Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures

Loo

Arimura

Cott

et al. 2018

ECS J. Solid State Sci. Technol.

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Epitaxially grown ultra-thin Si layers are often used to passivate Ge surfaces in the high-k gate module of (strained) Ge FinFET and Gate All Around devices. We use Si 4 H 10 as Si precursor as it enables epitaxial Si growth at temperatures down to 330 • C. C-V characteristics of blanket capacitors made on Ge virtual substrates point to the presence of an optimal Si thickness. In case of compressively strained Ge fin structures, the Si growth results in non-uniform and high strain levels in the strained Ge fin. These strain levels have been calculated for different shapes of the Ge fin and in function of the grown Si thickness. The high strain is the driving force for potential (unwanted) Ge surface reflow during Si deposition. The Ge surface reflow is strongly affected by the strength of the H-passivation during Si-capping and can be avoided by carefully selected process conditions.

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N2 as carrier gas: an alternative to H2 for enhanced epitaxy of Si, SiGe and SiGe:C

Cited by 38 publications

References 13 publications

Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane

Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane

Si1−xGex growth using Si3H8 by low temperature chemical vapor deposition

Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures

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