Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects

Abstract

Abstract-Multifrequency charge pumping analysis has been performed using a multiphonon-assisted charge trapping model in the view of analyzing the oxide region in energy and position that can be characterized using charge pumping (CP) characterization. Transient phenomena observed during CP and ac characterization (hysteresis loops) have been modeled, and the role of out-ofequilibrium quasi-Fermi levels in proximity of the Si/SiO 2 interface has been studied in detail.

Photothermal Electrical Resonance Spectroscopy of Physisorbed Molecules on a Nanowire Resonator

“…The importance of surface-states in modulating responses of bulk semiconductor materials through surface charges was addressed in the early 1970s by Lagowski and Gatos. , Catalan’s review reveals prospects on similar grounds in semiconductor BFO . Phonon de-excitations are usually in the form of a cascading multiphonon assisted relaxation process reflected as internal dissipation − and is attributed to phonon–phonon interactions or scattering. Defects in bulk or on the surface enhances it significantly − and they play a crucial role at the nanoscale as in our method.…”

Comparison between Equilibrium Voltage Step and Charge Pumping Techniques for Characterizing near Si-SiO2 Interface Traps

“…Indeed, inelastic tunneling transitions are known to occur in such cases (10), so that the tunneling for capture model extended to such cases of recombination could not simply hold. One can note however that integrating CP trap profiles always yields trap densities close to those measured using conventional CP when the values obtained using the two other methods are significantly lower.…”

“…This suggests that the traps entering the C-DLTS signal are not simply and fully those situated between the high and low gate pulse bias level but that more complex mechanisms take place, new traps entering the signal measured in such situations. Indeed, inelastic tunneling transitions are known to occur in such cases (10), so that the tunneling for capture model extended to such cases of recombination could not simply hold. One can note however that integrating CP trap profiles always yields trap densities close to those measured using conventional CP when the values obtained using the two other methods are significantly lower.…”