Comparing defect characterization techniques with non-radiative multiphonon charge trapping model

Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects

“…In our studies, we mainly focused on considering nominal properties with defect parameters extracted from the studies in [24]. The consequence of varying defect parameters is the subject of a separate publication [25].…”

New insights into gate-dielectric breakdown by electrical characterization of interfacial and oxide defects with reverse modeling methodology

“…In this approach, the trap frequency response, the electrostatic impact of trapped charges, the Trap Assisted Tunneling (TAT) and the direct tunneling effects on DC, AC and transient characteristics, have been considered ( Fig. 1-c, [5][6][7]). This fully-comprehensive physically-based solution permits, without the use of fitting parameters, to take into account inelastic charge trapping effects, which are commonly neglected in direct extraction methods relying on cross sectionbased models [8].…”

“…Three characterization techniques are coupled ( . Each probed region extraction methodology is described in details in [6][7]. The overlapping regions allow comparing extracted defects profiles between different measurement methods.…”

“…For AC analysis, for each large signal bias voltage and at a given frequency, the trap capacitance response is computed using the small signal model in [6]. For TAT analysis, the trap response consists in the trap-assisted tunneling current density from the substrate to the gate, computed as in [7] from the capture/emission fluxes of both electrons and holes at the channel and gate interfaces. In both AC and TAT analysis the probed region is shown for an entire gate voltage sweep integrating the normalized ration over the voltage biases.…”

“…The N ot profile is extracted comparing gate tunneling measurements with simulations and separating the direct tunneling contribution from the TAT current [7]. Fig.…”