Abstract:The Equilibrium Voltage Step (EVS) technique has been used for extraction of depth and energy concentration profile of traps situated in the oxide of a lightly stressed metal-oxidesemiconductor (MOS) structure. This has been achieved up to the very near Si-SiO 2 interface. The results are discussed and compared with those obtained using charge pumping (CP) technique. A good agreement is achieved between the trap densities extracted using the two methods even though differences in the shape of the profiles can … Show more
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