Material and device analysis of SiGe solar cell in a GaAsP–SiGe dual junction solar cell on Si substrate

Zhao, Xin; Li, Dun; Conrad, Brianna; Wang, Li; Soeriyadi, Anastasia; Diaz, Michèle T.; Lochtefeld, A.; Gerger, Andrew; Perez-Würfl, Ivan; Barnett, Allen

doi:10.1016/j.solmat.2014.11.027

Cited by 17 publications

(13 citation statements)

References 16 publications

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“…It has been recently suggested that InGaP/Si and GaAsP/SiGe tandem photovoltaic solar cells would reach high conversion efficiency on the low cost Si substrate [1][2][3]. GaAsPN alloys which are grown either by molecular beam epitaxy (MBE) or metalorganic vapor phase epitaxy (MOVPE) are very attractive materials for multijunction solar cells [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells

Ilahi

Almosni

Chouchane

et al. 2015

Solar Energy Materials and Solar Cells

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International audienceThe optical absorption and thermal conductivity of GaAsPN absorbers are investigated by means of optical absorption spectroscopy and photo-thermal deflection spectroscopy (PDS) for different 100 nm-thick GaAsNP/GaP samples under different growth conditions and various post-growth annealing temperatures. It is first shown that the As content strongly modifies the optical absorption spectrum of the GaAsPN: with a maximum absorption coefficient of 38,000 cm À 1 below the GaP bandgap energy. The optical absorption and thermal conductivities of the samples are then evaluated for various growth and annealing conditions using PDS: the results showing overall agreement with optical absorption spec-troscopy measurements. A significant improvement in optical absorption and thermal conductivity after annealing is demonstrated. The best thermal conductivity measured is equal to 4 W/m K. These results are promising for the development of absorbers in multijunction solar-cell architecture

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Section: Introductionmentioning

confidence: 99%

Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells

Ilahi

Almosni

Chouchane

et al. 2015

Solar Energy Materials and Solar Cells

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“…Transmittances of both the samples were measured by Perkin Elmer Lambda 1050 spectrophotometer. (1) is used to calculate the average absorption coefficients of graded buffer layers. T, and T 2 are the transmittances of wafer 1 and 2 respectively.…”

Section: Optical Absorption In Graded Buffer Layersmentioning

confidence: 99%

“…The reported threading dislocation density with this technique is only 3 x lO s /cm 2 which is low enough for high performance solar cell fabrication. An 18.9% efficient GaAsP/SiGe on silicon solar cell with a graded buffer layer has been reported [1][2][3]. A basic structure of this solar cell is shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Optical and electrical analysis of graded buffer layers in III–V/SiGe on silicon tandem solar cells

Li¹,

Zhao²,

Diaz³

et al. 2015

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)

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A graded buffer layer is needed in order to grow III-V/SiGe on silicon substrate because of the lattice mismatch.In this work, optical absorption in the graded buffer layer is quantified by measuring the transmittances. We demonstrate a 7 11m graded buffer layer with Ge composition from 0% to 82% is equivalent to a 2 11m SiGe film with 82% Ge composition in terms of optical absorption. A SiGe solar cell was fabricated and characterized. Quantu m efficiency measurements show that around 1 mAlcm 2 short circuit current is generated from the graded buffer layer in the fabricated solar cell.

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“…A GaAsP/SiGe tandem solar cell has a potential efficiency of 40% . In our previous work, high quality SiGe cells have been designed and grown on Si substrates with a process developed by AmberWave Inc. . A GaAs 0.79 P 0.21 top cell with a bandgap ( E g ) of 1.67 eV is targeted to be lattice and current matched with a Si 0.18 Ge 0.82 bottom cell.…”

Section: Introductionmentioning

confidence: 99%

Current and efficiency improvement for a GaAsP/SiGe on Si tandem solar cell device achieved by light trapping techniques

Wang

Zhao

et al. 2016

Physica Rapid Research Ltrs

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A GaAsP/SiGe tandem solar cell on Si substrate has been further fabricated using light trapping techniques, such as texturing and adding a back surface reflector, and thinning the Si substrate. This is of importance to increase the Jsc of the Si0.18Ge0.82 bottom cell in this tandem system since bottom cell is current limiting. The Jsc of the bottom cell has been increased by relative 7.4%. This current improvement leads to a predicted efficiency of near 21% for this tandem device, with an absolute efficiency improvement of 0.3% over previous results without light trapping processes. The current of the bottom cell can be further improved by optimizing the bottom cell structure and texturing process, further thinning the Si substrate and increasing Ge concentration. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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Material and device analysis of SiGe solar cell in a GaAsP–SiGe dual junction solar cell on Si substrate

Cited by 17 publications

References 16 publications

Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells

Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells

Optical and electrical analysis of graded buffer layers in III–V/SiGe on silicon tandem solar cells

Current and efficiency improvement for a GaAsP/SiGe on Si tandem solar cell device achieved by light trapping techniques

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