Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells

Ilahi, S.; Almosni, Samy; Chouchane, Fares; Perrin, Mathieu; Żelazna, K.; Yacoubi, N.; Kudrawiec, R.; Râle, Pierre; Lombez, Laurent; Guillemoles, Jean‐François; Durand, Olivier; Cornet, Charles

doi:10.1016/j.solmat.2015.06.003

Cited by 24 publications

(11 citation statements)

References 40 publications

(56 reference statements)

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“…Among HMAs, Ga(PAsN) with ∼40% P and a few percent of nitrogen has been recognized as the most optimal for applications in IBSCs 20 . Therefore in recent years this alloy has been intensively explored [21][22][23][24] . Moreover, Ga(PAsN) alloys with P concentration greater than 60% have also been studied [25][26][27][28] .…”

Section: Introductionmentioning

confidence: 99%

Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, and localization of states

Polak

Kudrawiec

Rubel

2019

Journal of Applied Physics

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The electronic band structure of Ga(PAsN) with a few percent of nitrogen is calculated in the whole composition of Ga(PAs) host using the state-of-the-art density functional methods including the modified Becke-Johnson functional to correctly reproduce the band gap, and band unfolding to reveal the character of the bands within the entire Brillouin zone. As expected, relatively small amounts of nitrogen introduced to Ga(PAs) lead to formation of an intermediate band below the conduction band which is consistent with the band anticrossing model, widely used to describe the electronic band structure of dilute nitrides. However, in this study calculations are performed in the whole Brillouin zone and reveal the significance of correct description of the band structure near the edges of Brillouin zone, especially for indirect band gap P-rich host alloy, which may not be properly captured with simpler models. The theoretical results are compared with experimental studies, confirming their reliability. The influence of nitrogen on the band structure is discussed in terms of application of Ga(PAsN) in optoelectronic devices such as intermediate band solar cells and light emitters. It is found that Ga(PAsN) with low N and As concentration has a band structure suitable for integration in Si tandem solar cells, since the lattice mismatch between Si and Ga(PAsN) is small in this case. Moreover, it is concluded that P-rich Ga(PAsN) alloys with low N concentration have a promising band structure for two colour emitters. Additionally, the effect of nitrogen incorporation on the carrier localization is studied and discussed.

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Section: Introductionmentioning

confidence: 99%

Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, and localization of states

Polak

Kudrawiec

Rubel

2019

Journal of Applied Physics

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“…In general, the intermediate band materials/structures can be divided into three main groups: nanostructures, such as quantum dots (QDs) 4–7 ; semiconductor bulk materials containing a high density of deep-level impurities 4,5,8 ; and highly mismatched alloys (HMAs) 9–11 . An important example of intermediate band HMA is the GaNPAs alloy in which P to As ratio can be tuned at will to change the band gap and modify the respective offsets between the conduction band edge and the localized N level energy making this alloy one of the most promising materials for IBSC applications 11–14 . The possibility of growing GaNPAs on Si substrates is a very important advantage of this alloy as it makes it feasible to co-integrate IBSC, multi-junctions solar cells 15 or laser emitters with Si technology.…”

Section: Introductionmentioning

confidence: 99%

Nitrogen-related intermediate band in P-rich GaNxPyAs1−x−y alloys

Żelazna

Gładysiewicz

Polak

et al. 2017

Sci Rep

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The electronic band structure of phosphorus-rich GaNxPyAs1−x−y alloys (x ~ 0.025 and y ≥ 0.6) is studied experimentally using optical absorption, photomodulated transmission, contactless electroreflectance, and photoluminescence. It is shown that incorporation of a few percent of N atoms has a drastic effect on the electronic structure of the alloys. The change of the electronic band structure is very well described by the band anticrossing (BAC) model in which localized nitrogen states interact with the extended states of the conduction band of GaAsP host. The BAC interaction results in the formation of a narrow intermediate band (E− band in BAC model) with the minimum at the Γ point of the Brillouin zone resulting in a change of the nature of the fundamental band gap from indirect to direct. The splitting of the conduction band by the BAC interaction is further confirmed by a direct observation of the optical transitions to the E+ band using contactless electroreflectance spectroscopy.

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“…To this end, the epitaxial growth of quasilattice-matched GaP on silicon (misfit of 0.37% at room temperature) has been developed for use as an efficient platform for the subsequent integration of low-defect or defect-free III-V-based heterostructures. For instance, the development of GaP/Si pseudo-substrates opens a route for the growth of direct-band-gap materials, using for example diluted nitride GaPN-based materials (Kunert et al, 2006;Ilahi et al, 2015;Yamane et al, 2017;Zelazna et al, 2017). Many strategies have been developed to suppress, reduce or filter the structural defects known to appear in such systems and detrimental for applications, such as dislocations (latticemismatch defects), micro-twins (MTs) (Devenyi et al, Lin et al, 2013;Lenz et al, 2019;Farin et al, 2019) resulting from the growth of polar crystals on non-polar substrates.…”

Section: Introductionmentioning

confidence: 99%

A study of the strain distribution by scanning X-ray diffraction on GaP/Si for III–V monolithic integration on silicon

Zhou¹,

Wang²,

Cornet³

et al. 2019

J Appl Cryst

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A synchrotron-based scanning X-ray diffraction study on a GaP/Si pseudosubstrate is reported, within the context of the monolithic integration of photonics on silicon. Two-dimensional real-space mappings of local lattice tilt and in-plane strain from the scattering spot distributions are measured on a 200 nm partially relaxed GaP layer grown epitaxially on an Si(001) substrate, using an advanced sub-micrometre X-ray diffraction microscopy technique (K-Map). Cross-hatch-like patterns are observed in both the local tilt mappings and the in-plane strain mappings. The origin of the in-plane local strain variation is proposed to be a result of misfit dislocations, according to a comparison between in-plane strain mappings and transmission electron microscopy observations. Finally, the relationship between the in-plane strain and the free surface roughness is also discussed using a statistical method.

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Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells

Cited by 24 publications

References 40 publications

Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, and localization of states

Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, and localization of states

Nitrogen-related intermediate band in P-rich GaNxPyAs1−x−y alloys

A study of the strain distribution by scanning X-ray diffraction on GaP/Si for III–V monolithic integration on silicon

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