Between 2014 and 2016, the need for ECS remained stable around 0.7%. Left ventricular guidewire perforation and annular rupture were the most frequent causes, accounting for almost half of ECS cases. Half of the patients could be salvaged by ECS-nevertheless, 1 year of all-cause mortality was high even in those ECS patients surviving the in-hospital period.
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Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si systems. Surface/interface contributions to the free energy variations are found to be prominent over strain relief processes. We finally propose a general and unified description of III-V/Si growth processes, including the description of antiphase boundaries formation.
International audienceWe compare the potentiality of bulk InGaPN and GaAsPN materials quasi-lattice-matched to silicon (Si), for multi-junction solar cells application. Bandgaps of both bulk alloys are first studied by a tight-binding model modified for nitrogen incorporation in diluted regimes. The critical thicknesses of those alloys are then calculated for various compositions. For the same lattice-mismatch and nitrogen amount, the bandgap of bulk GaAsPN is found to be closer to the targeted gap value of 1.7 eV for high efficiency tandem solar cell. GaPN and GaAsPN epilayers are then grown by molecular beam epitaxy on GaP substrate and studied by photoluminescence and X-ray diffraction. A GaAsPN bulk alloy emitting light at 1.77 eV at room temperature is obtained, demonstrating promising properties for further use in III-V/Si photovoltaic multijunction solar cells
We report the observation of enhanced charge-carrier redistribution in laterally organized and coupled InAs/ InP quantum dots ͑QDs͒. We show that a periodic organization appears in the QD plane for a high in-plane QD density ͑QDD͒. This organization enhances the lateral coupling between the dots, which is evidenced by photoluminescence and magnetophotoluminescence experiments. Electronic inter-QD lateral coupling results in an improved charge-carrier distribution at low temperature, as shown by electroluminescence on high QDD QD lasers. We conclude that the inter-QD tunneling occurs via the tunneling of excited states through the wetting layer, and discuss the prospects of using coupled QDs for improving the quantum efficiency and dynamical properties of QD lasers.
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