Electronic and optical properties ofInAs∕InPquantum dots on InP(100) andInP<

Abstract

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Increase of charge-carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots

“…A third and crucial difference is that here we are not discussing the coupling of the ground state, but of the excited states, whose lateral extent is typically between 1.5 and 2 times that of the ground state, 20,30 and was recently calculated to be about 66% more extended in isolated InAs/ InP QDs grown on a ͑311͒B substrate. 31 We can also compare the wave-function penetration in the two cases. For vertically stacked QDs it is into the barrier material, whereas here the wave function spreads out of the dots and into the WL.…”

Atomistic pseudopotential theory of optical properties of exciton complexes in InAs/InP quantum dots

“…Theoretically, the electronic structures and optical properties of InAs/GaAs QDs have been studied intensively via both k · p methods, [36][37][38][39][40] and the microscopic models. 25,41,42 On the other hand, InAs/InP QDs have attracted interest only very recently [43][44][45][46][47] mainly because their emission wavelengths are naturally around 1.55 µm (C-band), which are ideal for fiber optical telecommunication applications. Compared to InAs/GaAs QDs, there are much fewer works on InAs/InP QDs, both experimen- * Electronic mail: helx@ustc.edu.cn.…”

Semianalytical model for simulation of electronic properties of narrow-gap strained semiconductor quantum nanostructures

“…The Hamiltonian is block diagonal with the use of a new basis. For the simulation of the electronic properties of quantum dots (QD), the k.p method [7][8][9] is more or less a standard method although more elaborate theoretical schemes can be employed [10].…”