Semianalytical model for simulation of electronic properties of narrow-gap strained semiconductor quantum nanostructures

Even, Jacky; Doré, François Y.; Cornet, Charles; Pédesseau, Laurent

doi:10.1103/physrevb.77.085305

Cited by 15 publications

(13 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Non-linear elastic and piezoelectric effects in semiconductors have attracted attention in the last few years because highly strained materials are used intentionally to grow lattice mismatched nanostructures like quantum wells or quantum dots. [3][4][5][6][7] The explanation of the observed first-order phase transition in ferroelectric materials like BaTiO 3 or SrTiO 3 requires the presence of suitable electrostrictive terms in the expression for the free energy of the material. 8,9 Devonshire's theory relates the piezoelectric coefficients of the material in the polarized phase to the electrostrictive coefficients of the material in the unpolarized phase.…”

mentioning

confidence: 99%

“…The case of the non-centrosymmetric 43m point group is more complex but corresponds to a large number of semiconductor materials of technological interest crystallizing in the zinc-blende lattice. [3][4][5] Linear piezoelectric tensors and non-linear susceptibilities correspond only to one non-zero component. Non-linear piezoelectric tensor has three independent components: B 114 , B 124 , B 156 .…”

mentioning

confidence: 99%

See 1 more Smart Citation

On the entanglement of electrostriction and non-linear piezoelectricity in non-centrosymmetric materials

Pédesseau

Katan

Even

2012

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

International audienceAn extended and complete thermodynamical model of third-order electro-elastic coupling is proposed with symmetry analyses and density functional theory (DFT) calculations to evaluate consistently the various linear and non-linear coefficients. It is shown that in non-centrosymmetric materials, electrostrictive and non-linear piezoelectric phenomena are strongly coupled, except for materials crystallizing in a cubic lattice associated to the 432 point group. Thorough numerical results are given for GaN and AlN compounds in the Würtzite structure. Electrostriction dominates, but non-linear elasticity and non-linear piezoelectricity must be taken into account for strain evaluation whereas non-linear piezoelectricity yields a significant correction for electric field

show abstract

mentioning

confidence: 99%

mentioning

confidence: 99%

On the entanglement of electrostriction and non-linear piezoelectricity in non-centrosymmetric materials

Pédesseau

Katan

Even

2012

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

show abstract

“…However, interband Auger recombination processes have been recognized for a long time as important in bulk materials or quantum wells (QW) with small band gap energies. To simplify the simulation of InAs/InP QDs electronic properties and Auger effects, we used our model recently proposed 20 where QD geometries corresponding to the C ∞v symmetry are considered and complex inhomogeneous strain distribution are taken into account using only cylindrical coordinates (r,z).…”

Section: Interband Auger Effectmentioning

confidence: 99%

Analysis of carriers dynamics and laser emission in 1.55-μm InAs/InP(113)B quantum dot lasers

et al. 2010

View full text Add to dashboard Cite

Thanks to optimized growth techniques, a high density of uniformly sized InAs quantum dots (QD) can be grown on InP(113)B substrates. Low threshold currents obtained at 1.54 μm for broad area lasers are promising for the future. This paper is a review of the recent progress toward the understanding of electronic properties, carrier dynamics and device modelling in this system, taking into account materials and nanostructures properties. A first complete analysis of the carrier dynamics is done by combining time-resolved photoluminescence experiments and a dynamic three-level model, for the QD ground state (GS), the QD excited state (ES) and the wetting layer/barrier (WL). Auger coefficients for the intradot assisted relaxation are determined. GS saturation is also introduced. The observed double laser emission for a particular cavity length is explained by adding photon populations in the cavity with ES and GS resonant energies. Direct carrier injection from the WL to the GS related to the weak carrier confinement in the QD is evidenced. In a final step, this model is extended to QD GS and ES inhomogeneous broadening by adding multipopulation rate equations (MPREM). The model is now able to reproduce the spectral behavior in InAs-InP QD lasers. The almost continuous transition from the GS to the ES as a function of cavity length is then attributed to the large QD GS inhomogeneous broadening comparable to the GS-ES lasing energy difference. Gain compression and Auger effects on the GS transition are also be discussed.

show abstract

“…The aim of this paper is to propose a complete symmetry analysis and a semi analytical model for mechanical, piezoelectric and electronic properties of strained and inhomogeneous WZ QNs with a cylindrical geometry by analogy to QNs in zinc-blende lattice 7,8 . Symmetry properties are used as much as possible to simplify the problem.…”

mentioning

confidence: 99%

Symmetry analysis and exact model for the elastic, piezoelectric, and electronic properties of inhomogeneous and strained wurtzite quantum nanostructures

Even

2009

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

show abstract

Semianalytical model for simulation of electronic properties of narrow-gap strained semiconductor quantum nanostructures

Cited by 15 publications

References 19 publications

On the entanglement of electrostriction and non-linear piezoelectricity in non-centrosymmetric materials

On the entanglement of electrostriction and non-linear piezoelectricity in non-centrosymmetric materials

Analysis of carriers dynamics and laser emission in 1.55-μm InAs/InP(113)B quantum dot lasers

Symmetry analysis and exact model for the elastic, piezoelectric, and electronic properties of inhomogeneous and strained wurtzite quantum nanostructures

Contact Info

Product

Resources

About