Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells

Almosni, Samy; Robert, Cédric; Thanh, T. Nguyen; Cornet, Charles; Létoublon, Antoine; Quinci, Thomas; Levallois, Christophe; Perrin, Mathieu; Kuyyalil, Jithesh; Pédesseau, Laurent; Balocchi, Andréa; Barate, Philippe; Even, Jacky; Jancu, Jean–Marc; Bertru, Nicolas; Marie, X.; Durand, Olivier; Corre, Alain Le

doi:10.1063/1.4798363

Cited by 52 publications

(45 citation statements)

References 32 publications

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“…More recently, approaches involving metamorphic graded buffers such as GaAsP and SiGe have gained a lot of attention for III-V/Si tandem solar cells (Grassman, Carlin, and Ringel 2010;Dimroth et al 2014;Diaz et al 2014;Yaung, Lang, and Lee 2014). Additional heteroepitaxial integration approaches, which in comparison to the previously mentioned techniques have been less extensively explored, include -(i) lattice-matched dilute nitride (GaAsPN) solar cells on Si substrate (Geisz et al 2005;Almosni et al 2013;Yamane et al 2014) and (ii) lattice-mismatched InGaN based solar cells (Ager et al 2008;Brown et al 2010;Tran et al 2012) on Si substrate. The most critical challenges associated with heteroepitaxial integration of III-V materials on Si substrate are highlighted as follows:…”

Section: Heteroepitaxial Approach For Iii-v-on-si Integrationmentioning

confidence: 99%

“…Copyright 2014, IEEE (Almosni et al 2013). For lattice-matched 3J consideration, the ideal material selection is GaP 0.98 N 0.02 (2 eV)/ GaAs 0.20 P 0.73 N 0.07 (1.5 eV)//Si (1.1 eV) (Almosni et al 2013). GaAs 0.09 P 0.87 N 0.04 alloy (bandgap of 1.81 eV) lattice-matched to Si substrate is an attractive top cell choice for 2J III-V/Si tandem solar cell (Almosni et al 2013).…”

Section: Lattice-matched Iii-v-n Materials On Simentioning

confidence: 99%

“…Copyright 2014, IEEE Figure 12 QE plot for 2J InGaP/GaAs solar cell structure grown on GaAs/GaAsP/GaP/Si substrate indicating the bottom GaAs subcell limits the two-terminal current, reprinted with permission from Dimroth et al (2014). Copyright 2014, IEEE (Almosni et al 2013). For lattice-matched 3J consideration, the ideal material selection is GaP 0.98 N 0.02 (2 eV)/ GaAs 0.20 P 0.73 N 0.07 (1.5 eV)//Si (1.1 eV) (Almosni et al 2013).…”

Section: Lattice-matched Iii-v-n Materials On Simentioning

confidence: 99%

“…For lattice-matched 3J consideration, the ideal material selection is GaP 0.98 N 0.02 (2 eV)/ GaAs 0.20 P 0.73 N 0.07 (1.5 eV)//Si (1.1 eV) (Almosni et al 2013). GaAs 0.09 P 0.87 N 0.04 alloy (bandgap of 1.81 eV) lattice-matched to Si substrate is an attractive top cell choice for 2J III-V/Si tandem solar cell (Almosni et al 2013). Furthermore, from growth perspective, GaAsPN alloys are easier to grown in comparison to InGaPN due to the difficulties associated with InN and GaN solidphase miscibility (Korpijärvi et al 2012;Hsu and Walukiewicz 2008;Ho and Stringfellow 1996).…”

Section: Lattice-matched Iii-v-n Materials On Simentioning

confidence: 99%

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III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

Jain

Hudait

2014

Energy Harvesting and Systems

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Achieving high-efficiency solar cells and at the same time driving down the cell cost has been among the key objectives for photovoltaic researchers to attain a lower levelized cost of energy (LCOE). While the performance of silicon (Si) based solar cells have almost saturated at an efficiency of~25%, III-V compound semiconductor based solar cells have steadily shown performance improvement at~1% (absolute) increase per year, with a recent record efficiency of 44.7%. Integration of such high-efficiency III-V multijunction solar cells on significantly cheaper and large area Si substrate has recently attracted immense interest to address the future LCOE roadmaps by unifying the high-efficiency merits of III-V materials with low-cost and abundance of Si. This review article will discuss the current progress in the development of III-V multijunction solar cell integration onto Si substrate. The current state-of-the-art for III-Von-Si solar cells along with their theoretical performance projections is presented. Next, the key design criteria and the technical challenges associated with the integration of III-V multijunction solar cells on Si are reviewed. Different technological routes for integrating III-V solar cells on Si substrate through heteroepitaxial integration and via mechanical stacking approach are presented. The key merits and technical challenges for all of the till-date available technologies are summarized. Finally, the prospects, opportunities and future outlook toward further advancing the performance of III-V-on-Si multijunction solar cells are discussed. With the plummeting price of Si solar cells accompanied with the tremendous headroom available for improving the III-V solar cell efficiencies, the future prospects for successful integration of III-V solar cell technology onto Si substrate look very promising to unlock an era of next generation of high-efficiency and low-cost photovoltaics.

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Section: Heteroepitaxial Approach For Iii-v-on-si Integrationmentioning

confidence: 99%

Section: Lattice-matched Iii-v-n Materials On Simentioning

confidence: 99%

Section: Lattice-matched Iii-v-n Materials On Simentioning

confidence: 99%

Section: Lattice-matched Iii-v-n Materials On Simentioning

confidence: 99%

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III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

Jain

Hudait

2014

Energy Harvesting and Systems

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“…Recent progress in III-V-N alloys monolithic growth on silicon substrate Robert et al 2011) led our research team to propose these promising materials for multi-junction solar cells (Almosni et al 2013;Ming-Han and Yuh-Renn 2012;Aho et al 2010). In this paper, we propose a GaAsPN diluted nitride alloy as the top junction material of a Si based tandem solar cell.…”

Section: Introductionmentioning

confidence: 99%

Design of a lattice-matched III–V–N/Si photovoltaic tandem cell monolithically integrated on silicon substrate

et al. 2014

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Abstract. In this paper, we present a comprehensive study of high efficiencies tandem solar cells monolithically grown on a silicon substrate using GaAsPN absorber layer. InGaAs(N) quantum dots and GaAsPN quantum wells have been grown recently on GaP/Si susbstrate for applications related to light emission. For photovoltaic applications, we consider the GaAsPN diluted nitride alloy as the top junction material due to both its perfect lattice matching with Si and ideal bandgap energy for current generation in association with the Si bottom cell. Numerical simulation of the top cell is performed. The effect of layer thicknesses and doping on the cell efficiency are evidenced. In these structures a tunnel junction (TJ) is needed to interconnect both the top and bottom sub-cells. We compare the simulated performances of different TJ structures and show that the GaP(n+)/Si(p+) TJ is promising to improve performances of the current-voltage characteristic.

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In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

Supplie

May

Brückner

et al. 2017

Adv Materials Inter

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which he pioneered and established. In general, interfaces do not only determine electronic properties of the final device; their atomic order also highly affects growth kinetics and defect formation. Moreover, the design of solid-liquid and hybrid interfaces determines their chemical reactivity and stability. In situ monitoring of interface preparation, formation, and interfacial reactions thus promises efficient process control. Paired with a detailed understanding of interface formation mechanisms, however, the true power of in situ control is to allow for specific modification and tuning of interface formation for the device of choice. There are several excellent reviews on in situ approaches covering wide ranges of materials from basic science to applications as well as varieties of preparation and analysis techniques. [2][3][4][5][6][7][8][9][10][11] As indicated in Figure 1, this review will be focused on in situ control over interfaces of materials that are relevant for photoinduced reactions in high-efficiency solar energy conversion and sensing applications with in situ control of semiconductor/polymer/ biological interfaces. We will restrict the techniques to realistic and complex, non-ultrahigh-vacuum (UHV) ambient, where in situ control is most demandingbut also highly desired. The more complex the interfacial reactions are, the more important is the in situ characterization. Ex situ approaches can contribute to an indirect understanding of interface formation, but to understand and, finally, control the dynamic processes taking place, real-time measurements are appropriate. The challenge, we are facing, is twofold: On the one hand, increased interaction with the surrounding ambient causes higher complexity. Yet at the same time, it decreases the number of applicable techniques. On the other hand, those techniques are often elaborate and not necessarily easy to interpret. In a nutshell, we will discuss four main topics:(i) Surface preparation during growth of structures for highefficiency solar energy conversion: World-record conversion efficiencies in both photovoltaics [12,13] and solar water splitting [14] are achieved with multijunction solar cells based on epitaxial III/V compound semiconductor structures. We will discuss in situ controlled preparation Solar energy conversion and photoinduced bioactive sensors are representing topical scientific fields, where interfaces play a decisive role for efficient applications. The key to specifically tune these interfaces is a precise knowledge of interfacial structures and their formation on the microscopic, preferably atomic scale. Gaining thorough insight into interfacial reactions, however, is particularly challenging in relevant complex chemical environment. This review introduces a spectrum of material systems with corresponding interfaces significant for efficient applications in energy conversion and sensor technologies. It highlights appropriate analysis techniques capable of monitoring critical physicochemical reactions in situ during non-vacuu...

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Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells

Cited by 52 publications

References 32 publications

III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

Design of a lattice-matched III–V–N/Si photovoltaic tandem cell monolithically integrated on silicon substrate

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

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