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International audienceThe electronic band structure and the work function of MgO thin films epitaxially grown on Ag(001) have been investigated using x-ray and ultraviolet photoelectron spectroscopy for various oxide thicknesses. The deposition of thin MgO films on Ag(001) induces a strong diminution in the metal work function. The p-type Schottky barrier height is constant at 3.85+/-0.10 eV above two MgO monolayers and the experimental value of the ionization potential is 7.15+/-0.15 eV. Our results are well consistent with the description of the Schottky barrier height in terms of the Schottky-Mott model corrected by an MgO-induced polarization effect

Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si systems. Surface/interface contributions to the free energy variations are found to be prominent over strain relief processes. We finally propose a general and unified description of III-V/Si growth processes, including the description of antiphase boundaries formation.

The electronic properties of redox-active transition metal clusters (Re 6 Se 8 ) covalently immobilized on modified Si(111) surfaces through linear alkyl spacers have been studied as a function of the cluster coverage (1 × 10 13 -6 × 10 13 cm -2 ). The latter is controlled by using Si(111)/H surfaces modified by dense mixed alkyl/ acid-terminated monolayers with variable fraction of the acid grafting sites from 5 to 100% in solution. Quantitative X-ray photoemission analysis, spectroscopic ellipsometry, and scanning tunnelling microscopy indicate a covalent attachment of a submonolayer to densely packed monolayer of Re 6 Se 8 clusters, while the vibrational Raman signature confirms the cluster integrity within the monolayer. Electrical band gaps as deduced from scanning tunnelling spectroscopy have been obtained for low Re 6 Se 8 cluster coverage. Using ultraviolet photoemission spectroscopy, electronic properties such as ionization potential changes and energy level alignments at organic/inorganic interfaces are studied. We show that the lowest unoccupied molecular orbital of the Re 6 Se 8 cluster is close to the bottom of the Si conduction band. At high cluster coverage, this affects the current-voltage characteristics measured using a weakly interacting top mercury contact onto the organic monolayer/silicon junctions. Indeed, on n-type silicon, the high level current at low bias and the shape of the conductance G(V) curve indicate a Schottky barrier height lowering. On the other hand, the current-voltage characteristics are the same for both acid-terminated and low coverage Re 6 Se 8 cluster junctions at low bias; the high Schottky barrier height limits the current at low bias. When the forward bias increases, the current is tunnelling limited. As expected from the band alignment deduced from photoemission data, the opposite behavior is obtained on p-type silicon.

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The electronic band structure at the interface of the MgO-GaAs(001) tunnel contact has been experimentally studied. X-ray photoelectron spectroscopy has been used to measure the valence-band offset at the MgO-GaAs(001) heterojunction interface. The valence-band offset ΔEV is determined to be 4.2±0.1eV. As a consequence, a nested “type-I” band alignment with a conduction-band offset of ΔEC=2.2±0.1eV is found. The accurate determination of the valence and conduction band offsets is important for the fundamental understanding of the tunnel spin injection in GaAs.