2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) 2015
DOI: 10.1109/pvsc.2015.7356237
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Optical and electrical analysis of graded buffer layers in III–V/SiGe on silicon tandem solar cells

Abstract: A graded buffer layer is needed in order to grow III-V/SiGe on silicon substrate because of the lattice mismatch.In this work, optical absorption in the graded buffer layer is quantified by measuring the transmittances. We demonstrate a 7 11m graded buffer layer with Ge composition from 0% to 82% is equivalent to a 2 11m SiGe film with 82% Ge composition in terms of optical absorption. A SiGe solar cell was fabricated and characterized. Quantu m efficiency measurements show that around 1 mAlcm 2 short circuit … Show more

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“…A compromise is to use active SiGe as the bottom cell and GaAsP as its top cell to implement a bandgap combination close to GaAsP/Si. This GaAsP/SiGe dual-junction device was demonstrated in [23][24][25][26][27][28].…”
Section: Graded Simentioning
confidence: 99%
“…A compromise is to use active SiGe as the bottom cell and GaAsP as its top cell to implement a bandgap combination close to GaAsP/Si. This GaAsP/SiGe dual-junction device was demonstrated in [23][24][25][26][27][28].…”
Section: Graded Simentioning
confidence: 99%