To significantly impact climate change, the annual photovoltaic (PV) module production rate must dramatically increase from ~135 gigawatts (GW) in 2020 to ~3 terawatts (TW) around 2030. A key knowledge...

GaAsP/SiGe dual-junction solar cells have been grown on silicon substrates which have the potential of achieving tandem efficiencies of 40%. This lattice-matched structure facilitates high performance from the III-V top cell while maintaining the cost advantages of silicon solar cells. The SiGe graded buffer allows for lattice matching of the top and bottom cell while providing a low dislocation interface between the silicon substrate and the device layers. Initial structures have reached an efficiency of 18.9%. Near term improvements to 25.0% under AM1.5G will be described.Index Terms -tandem solar cells, gallium arsenide phosphide, semiconductor materials, silicon germanium.

No abstract

No abstract

No abstract