Current and efficiency improvement for a GaAsP/SiGe on Si tandem solar cell device achieved by light trapping techniques

Wang, Li; Li, Dun; Zhao, Xin; Conrad, Brianna; Diaz, Michèle T.; Soeriyadi, Anastasia; Lochtefeld, A.; Gerger, Andrew; Perez-Würfl, Ivan; Barnett, Allen

doi:10.1002/pssr.201600157

Cited by 7 publications

(6 citation statements)

References 12 publications

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“…We observe that the absorption range of the proposed structure varies from 225 to 900nm with the amplitude of EQE =90%. These results were validated by two other measured results from refs [27] and [28].We notice that the absorption range obtained by [27,28] varies from 300 to 778 nm. The absorption range of our structure is larger than the absorption range found by refs [27,28].…”

Section: Resultssupporting

confidence: 89%

“…These results were validated by two other measured results from refs [27] and [28].We notice that the absorption range obtained by [27,28] varies from 300 to 778 nm. The absorption range of our structure is larger than the absorption range found by refs [27,28]. So we got a relative absorption gain of 29.12%.…”

Section: Resultssupporting

confidence: 89%

“…Strain and bandgap energy of GaAs 1-x P x /Si 0.12 Ge 0.88 as function of Phosphorus composition [27]. Mεasurεd top cεll [27] Mεasurεd top cεll [28] EQE (%) Wavεlεngth (µm) [27,28]. Figure 5 shows the variation of the current density of three single solar cells and the total solar cell as a function of voltage.…”

Section: Resultsmentioning

confidence: 99%

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Simulation and optimization of GaAs1-xPx/Si1-yGey/Ge triple junction solar cells

Azzououm,

Aissat,

Vilcot

2024

JOR

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This paper focuses on studying and simulating a GaAs1-xPx/Si1-yGey/Ge triple-junction solar cell structure. First, the strain and the bandgap energy associated to the SiGe layer have been studied. The optimal germanium concentration is 0.88 with a strain around 0.45%. Then, the phosphor concentration effect on the strain and the bandgap energy of the upper layer GaAs1-xPx/Si0.12Ge0.88 has been optimized. At room temperature, the optimal output parameter reach Jsc=34.41mA/cm2 , Voc=1.27V, FF=88.42% and η=38.45% for an absorber thickness of 4.5µm and x=0.47, with a strain that doesn’t exceed 1.5%. This study has enabled us to design a high-efficiency, low cost 3J solar cell.

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Section: Resultssupporting

confidence: 89%

Section: Resultssupporting

confidence: 89%

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Simulation and optimization of GaAs1-xPx/Si1-yGey/Ge triple junction solar cells

Azzououm,

Aissat,

Vilcot

2024

JOR

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“…The front III−V side was protected by photoresist and Apiezon wax to prevent any chemical damage during the texturing. 21 The application of photoresist protection between the wax and III−V is imperative to preventing any potential residues caused by the pronounced volatility of toluene, which was used in the wax removal process. As a passivation layer, a 5 nm Al 2 O 3 / 100 nm SiO 2 stack was deposited on the textured Si back surface via atomic layer deposition and plasma-enhanced chemical vapor deposition (PECVD), respectively.…”

Section: Si Cell Fabricationmentioning

confidence: 99%

Improving the Open-Circuit Voltage of III–V Layer-Filtered Si Subcells for Monolithic III–V/Si Tandem Solar Cells

Ju,

Madarang,

Kim

et al. 2024

ACS Appl. Energy Mater.

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Monolithically integrated III−V/Si multijunction solar cells are promising for highly reliable, scalable, and efficient photovoltaic cells. However, growth of III−V materials at high temperatures degrades the open-circuit voltage of Si subcells primarily due to reduced Si bulk minority carrier lifetimes. Here, we report a systematic study of open-circuit voltage improvements from 0.505 to 0.539 V in 2 μm thick GaAs layer-filtered Si subcells by employing SiO 2 /SiN x protection layers during III−V molecular beam epitaxy (MBE) growth and by serving them as surface passivation. Cells with the protection layers exhibit a Si bulk minority carrier lifetime of 180 μs after III−V MBE growth, which is about 9 times higher than those (21 μs) without protection layers. A 1.65 eV, Al 0.18 Ga 0.82 As buffer-filtered Si subcell reveals 0.548 V and is compared with those of previous III−V/Si tandem studies. This study presents a practical approach to realizing high-performance Si subcells for monolithically integrated high-efficiency III−V/Si tandem solar cells.

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“…However, such ARCs often require high temperature vacuum processes adding significant manufacturing and deployment costs. Various nanoscale surface patterning techniques have been suggested as lower cost methods to improve light absorption within active material of solar cells due to light trapping schemes . However, such approaches may lead to negative impacts on solar cells' performance as they can increase surface recombination and decrease the open circuit voltage.…”

Section: Introductionmentioning

confidence: 99%

Improving Dielectric Nanoresonator Array Coatings for Solar Cells

Zhitenev

2018

Part & Part Syst Charact

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Antireflection coatings based on dielectric nanosphere arrays are discussed in application to photovoltaic materials including silicon and gallium arsenide. We perform macro- and nanoscale characterization and finite-difference time-domain calculations demonstrating the enhanced optoelectronic properties. A significant absorptivity enhancement is achieved due to the collective resonant coupling of excited whispering gallery-like modes and thin-film interference effects. The resonant coupling is masked in macroscale measurements by the size variation of nanospheres, but it is clearly seen through imaging photocurrent at the nanoscale with near-field scanning photocurrent microscopy. The resonant coupling can be effectively tuned by the material, configuration, or size of nanospheres. Hybrid coatings combining nanospheres of different materials yield the highest efficiency gain, more than 30 %. We also evaluate an impact of manufacturing defects such as double layer formation. While the performance degrades, the antireflection coating still offers marked improvement in comparison with bare cells.

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Current and efficiency improvement for a GaAsP/SiGe on Si tandem solar cell device achieved by light trapping techniques

Cited by 7 publications

References 12 publications

Simulation and optimization of GaAs1-xPx/Si1-yGey/Ge triple junction solar cells

Simulation and optimization of GaAs1-xPx/Si1-yGey/Ge triple junction solar cells

Improving the Open-Circuit Voltage of III–V Layer-Filtered Si Subcells for Monolithic III–V/Si Tandem Solar Cells

Improving Dielectric Nanoresonator Array Coatings for Solar Cells

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