Lasing from InGaAs/GaAs quantum dots with extended wavelength and well-defined harmonic-oscillator energy levels

Abstract

Data are presented on the lasing transitions from InGaAs/GaAs quantum dots that exhibit four well-resolved energy transitions, with the electronic state density of a two-dimensional harmonic oscillator. Lasing has been obtained on the second and third transitions, depending on the cavity (gain) length, with the longest lasing wavelength measured to be 1.19 μm. The temperature dependence of threshold is studied and regions of nearly temperature-independent threshold are found. Interesting aspects of the unique electronic state density for lasers are discussed.

Optical investigation of InGaAs-capped InAs quantum dots: Impact of the strain-driven phase separation and dependence upon post-growth thermal treatment

“…Recent applications of quantum dots include lasing [1,2] and infrared detectors [3,4]. A successful approach, widely used for long wavelength QD lasers on GaAs substrate, is associated with either covering or embedding InAs QDs with InGaAs layers [5,6].…”

GaAs-based 1.3 µm InGaAs quantum dot lasers: A status report

“…At present there are two main approaches to fabricate QDs emitting near 1.3 µm suitable for the active region in high performance lasers, namely, the overgrowth of InAs nanoislands by an InGaAs alloy [20][21][22][23][24][25][26][27][28][29] and the growth using alternating beams of In, As 2 , Ga, and As 2 . [30][31][32][33][34][35][36][37][38] …”

Effect of growth temperature on InAs wetting layer grown on (113)A GaAs by molecular beam epitaxy

“…Self-assembled quantum dots (QDs) have been extensively studied in recent years because of their potential technological applications [1][2][3]. Self-assembling occurs by taking advantage of the Stranski-Krastanow (SK) growth lattice of mismatch such as InAs/GaAs (7.2%).…”