“…At present there are two main approaches to fabricate QDs emitting near 1.3 µm suitable for the active region in high performance lasers, namely, the overgrowth of InAs nanoislands by an InGaAs alloy [20][21][22][23][24][25][26][27][28][29] and the growth using alternating beams of In, As 2 , Ga, and As 2 . [30][31][32][33][34][35][36][37][38] …”