Optical investigation of InGaAs-capped InAs quantum dots: Impact of the strain-driven phase separation and dependence upon post-growth thermal treatment

Ilahi, Bouraoui; Sfaxi, L.; Maâref, H.

doi:10.1016/j.jlumin.2007.04.014

Cited by 22 publications

(13 citation statements)

References 19 publications

(27 reference statements)

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“…That suggests an activated character of non-radiative processes. In order to explain this phenomenon, a model has been used to describe the strong quenching of the PL intensity with increasing temperature [18], According to this model; the temperature dependence of the PL intensity is described by…”

Section: Resultsmentioning

confidence: 99%

Clustering effects in optical properties of BGaAs/GaAs epilayers

Hamila¹,

Saidi²,

Fouzri³

et al. 2009

Journal of Luminescence

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Section: Resultsmentioning

confidence: 99%

Clustering effects in optical properties of BGaAs/GaAs epilayers

Hamila¹,

Saidi²,

Fouzri³

et al. 2009

Journal of Luminescence

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“…The reduction in the height of the QDs can only partially explain the blueshift so it is necessary to consider the change in composition of QDs produced by the In-Ga intermixing [36]. Our results from TEM and FEM analysis of the QDs suggest an increase of the Ga content inside the QDs of about 20% and an increase of the QD average volume of 30%.…”

Section: Discussionmentioning

confidence: 80%

Effect of annealing in the Sb and In distribution of type II GaAsSb-capped InAs quantum dots

Reyes

Ulloa

Guzmán

et al. 2015

Semicond. Sci. Technol.

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Type II emission optoelectronic devices using GaAsSb strain reduction layers (SRL) over InAs quantum dots (QDs) have aroused great interest. Recent studies have demonstrated an extraordinary increase in photoluminescence (PL) intensity maintaining type II emission after a rapid thermal anneal (RTA), but with an undesirable blueshift. In this work, we have characterized the effect of RTA on InAs/GaAs QDs embedded in a SRL of GaAsSb by transmission electron microscopy (TEM) and finite element simulations. We find that annealing alters both the distribution of Sb in the SRL as well as the exchange of cations (In and Ga) between the QDs and the SRL. First, annealing causes modifications in the capping layer, reducing its thickness but maintaining the maximum Sb content and improving its homogeneity. In addition, the formation of Sb-rich clusters with loop dislocations is noticed, which seems not to be an impediment for an increased PL intensity. Second, RTA produces flatter QDs with larger base diameter and induces a more homogeneous QD height distribution. The Sb is accumulated over the QDs and the RTA enlarges the Sb-rich region, but the Sb contents are very similar. This fact leaves the type II alignment without major changes. Atomic-scale strain analysis of the nanostructures reveal a strong intermixing of In/Ga between the QDs and the capping layer, which is the main responsible mechanism of the PL blueshift. The improvement of the crystalline quality of the capping layer together with higher homogeneity QD sizes could be the origin of the enhancement of the PL emission.

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“…[13][14][15] In this situation, the activation energy E a , extracted from Arrhenius plots, approximates the differences between the QDas emission energy and that of the wetting layer or barrier material. 16 For the As-grown sample, the derived activation energy, around 238 meV, is close to the energy difference between the ground state emission energy of the QDas and that of the wetting layer.…”

Section: Resultsmentioning

confidence: 99%

Temperature Dependent Photoluminescence Properties of InAs/InP Quantum Dashes Subjected to Low Energy Phosphorous Ion Implantation and Subsequent Annealing

Alouane¹,

Ilahi²,

Maaref³

et al. 2011

J. Nanosci. Nanotech.

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We report on the impact of phosphorous ion-implantation-induced band gap tuning on the temperature dependent photoluminescence (PL) properties of InAs/InP quantum dashes (QDas). The high temperature range carriers' activation energy, extracted from Arrhenius plots, is found to decrease from 238 to 42 meV when the ion implantation dose increases from 10(11) cm(-2) to 5 x 10(14) cm(-2) which is consistent with the observed emission energy blueshift increase with increasing the ion implantation doses. This effect is attributed to the As/P exchange which reduces the carrier confining potential depth. For intermediate ion implantation doses the reduced carrier confining potential barrier combined with the non-uniform intermixing process, that causes an increased QDas size dispersion, result in anomalous temperature-dependent PL properties. Indeed, the temperature induced PL emission energy redshift measured between 10 K and 300 K is found to be strongly affected by the carrier redistribution within the broadened localized QDas states.

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Optical investigation of InGaAs-capped InAs quantum dots: Impact of the strain-driven phase separation and dependence upon post-growth thermal treatment

Cited by 22 publications

References 19 publications

Clustering effects in optical properties of BGaAs/GaAs epilayers

Clustering effects in optical properties of BGaAs/GaAs epilayers

Effect of annealing in the Sb and In distribution of type II GaAsSb-capped InAs quantum dots

Temperature Dependent Photoluminescence Properties of InAs/InP Quantum Dashes Subjected to Low Energy Phosphorous Ion Implantation and Subsequent Annealing

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