A highly efficient third generation catalyst, CaCu3Ti4O12 (CCTO) shows excellent photoelectrochemical (PEC) and photocatalytic ability. As only 4% part of the solar spectrum covers UV light, thus it is highly desirable to develop visible light active photocatalyst materials like CCTO for effective solar energy conversion. A direct band transition with a narrow band gap (1.5 eV) was observed. Under light irradiation, high photocurrent density was found to be 0.96 mA/cm2, indicating the visible light induced photocatalytic ability of CCTO. Visible light mediated photocatalytic and photoelectrocatalytic degradation efficiency of CaCu3Ti4O12 pellets (CCTO) was investigated for three classes of pharmaceutical waste: erythrosin (dye), ciprofloxacin (antibiotic) and estriol (steroid). It is found that the degradation process follows first order kinetic reaction in electrocatalysis, photocatalysis and photoelectrocatalysis and high kinetic rate constant was observed in photoelectrocatalysis. This was quite high in comparison to previously reported methods.

In order to investigate the optical properties of wurtzite (Wz) InP nanowires grown on Si(001) by solid source molecular beam epitaxy with the vapour-liquid-solid method, the growth temperature and V/III pressure ratio have been optimized to remove any zinc-blende insertion. These pure Wz InP nanowires have been investigated by photoluminescence (PL), time-resolved PL and PL excitation. Direct observation of the second and third valence band in Wz InP nanowires using PL spectroscopy at high excitation power have been reported and, from these measurements, a crystal field splitting of 74 meV and a spin-orbit interaction energy of 145 meV were extracted. Based on the study of temperature-dependent optical properties, we have performed an investigation of the thermal escape processes of carriers and the electron-phonon coupling strength.

Influence of structural evolution on energy storage properties in Bi 0.5 Na 0.5 TiO 3 -SrTiO 3 -NaNbO 3 lead-free ferroelectric ceramics Journal of Applied Physics 121, 054103 (2017) This study systematically investigates the phenomenon of internal clamping in ferroelectric materials through the formation of glass-ceramic composites. Leadfree 0.715Bi 0.5 Na 0.5 TiO 3 −0.065BaTiO 3 −0.22SrTiO 3 (BNT-BT-ST) bulk ferroelectric ceramic was selected for the course of investigation. 3BaO − 3TiO 2 − B 2 O 3 (BTBO) glass was then incorporated systematically to create sintered samples containing 0%, 2%, 4% and 6% glass (by weight). Upon glass induction features like remnant polarization, saturation polarization, hysteresis losses and coercive field could be varied as a function of glass content. Such effects were observed to benefit derived applications like enhanced energy storage density ∼174 k J/m 3 to ∼203 k J/m 3 and pyroelectric coefficient 5.7x10 −4 Cm −2 K −1 to 6.8x10 −4 Cm −2 K −1 by incorporation of 4% glass. Additionally, BNT-BT-ST depolarization temperature decreased from 457K to 431K by addition of 4% glass content. Glass incorporation could systematically increases diffuse phase transition and relaxor behavior temperature range from 70 K to 81K and 20K to 34 K, respectively when 6% and 4% glass content is added which indicates addition of glass provides better temperature stability. The most promising feature was observed to be that of dielectric response tuning. It can be also used to control (to an extent) the dielectric behavior of the host ceramic. Dielectric permittivity and losses decreased from 1278 to 705 and 0.109 to 0.107 for 6% glass, at room temperature. However this reduction in dielectric constant and loss increases pyroelectric figures of merit (FOMs) for high voltage responsivity (F v ) high detectivity (F d ) and energy harvesting (F e ) from 0.018 to 0.037 m 2 C −1 , 5.89 to 8.85 µPa −1/2 and 28.71 to 61.55 Jm −3 K −2 , respectively for 4% added ceramic-glass at room temperature. Such findings can have huge implications in the field of tailoring ferroelectric response for application specific requirements. C 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. [http://dx

Optical properties of wurtzite InP/InAs/InP core-shell nanowires grown on silicon substrates by solid source molecular beam epitaxy are studied by means of photoluminescence and microphotoluminescence. The growth conditions were optimized to obtain purely wurtzite radial quantum wells emitting in the telecom bands with a radiative lifetime in the 5-7 ns range at 14 K. Optical studies on single nanowires reveal that the polarization is mainly parallel to the growth direction. A 20-fold reduction of the photoluminescence intensity is observed between 14 and 300 K confirming the very good quality of the nanowires.

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This work reports on theoretical and experimental investigation of the impact of InAs quantum dots (QDs) position with respect to InGaAs strain reducing layer (SRL). The investigated samples are grown by molecular beam epitaxy and characterized by photoluminescence spectroscopy (PL). The QDs optical transition energies have been calculated by solving the three dimensional Schrödinger equation using the finite element methods and taking into account the strain induced by the lattice mismatch. We have considered a lens shaped InAs QDs in a pure GaAs matrix and either with InGaAs strain reducing cap layer or underlying layer. The correlation between numerical calculation and PL measurements allowed us to track the mean buried QDs size evolution with respect to the surrounding matrix composition. The simulations reveal that the buried QDs’ realistic size is less than that experimentally driven from atomic force microscopy observation. Furthermore, the average size is found to be slightly increased for InGaAs capped QDs and dramatically decreased for QDs with InGaAs under layer.