Wurtzite InP/InAs/InP core–shell nanowires emitting at telecommunication wavelengths on Si substrate

Abstract

Optical properties of wurtzite InP/InAs/InP core-shell nanowires grown on silicon substrates by solid source molecular beam epitaxy are studied by means of photoluminescence and microphotoluminescence. The growth conditions were optimized to obtain purely wurtzite radial quantum wells emitting in the telecom bands with a radiative lifetime in the 5-7 ns range at 14 K. Optical studies on single nanowires reveal that the polarization is mainly parallel to the growth direction. A 20-fold reduction of the photoluminescence intensity is observed between 14 and 300 K confirming the very good quality of the nanowires.

Electrical properties and band diagram of InSb-InAs nanowire type-III heterojunctions

“…It has been recently shown by a number of authors (see, e.g., Refs. [13][14][15][16]) that NWs of narrow-gap III-V semiconductors may not have a zinc-blende crystalline structure, as bulk crystals, but a wurtzite one. The high-resolution TEM microscopy showed 11 that in our samples the InAs base grows with the wurtzite structure, whereas the top InSb segment crystallizes in the zinc blende phase, which agrees with the results of other authors.…”

Morphological and structural properties of InP/Gd2O3 nanowires grown by molecular beam epitaxy on silicon substrate

“…Details concerning the growth parameters (growth temperature, V/III beam equivalent pressure ratio, growth rate) can be found elsewhere [25,26]. In order to grow Gd 2 O 3 , the InP NWs on Si substrate were then introduced into a separate MBE reactor equipped with an electron gun evaporator and a granular Gd 2 O 3 target.…”

“…InP NWs exhibit a wurtzite structure with the growth direction perpendicular to the (0002) InP WZ lattice plane [25,26]. The NWs facets are parallel to (1-100) planes.…”

InP–InxGa1−xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3–1.55 μm wavelength range

“…Although nanowire heterostructures combining various materials have been extensively reported, [9][10][11][12][13][14][15][16][17][18][19][20] reports on the use of InP-InGaAs material combination in nanowires have been surprisingly rare. 12, [21][22][23][24][25] In fact, InP-InGaAs nanowire QWs have not been reported despite popularity of their planar counterpart.…”

“…Therefore theoretically predicted values, ZB values, realistic estimations and linear interpolation are often used in most WZ calculations. 17,18 Here too, the same approach is adopted where appropriate. The blue curve in Fig It could be seen that once the material system and the structure is modelled, together with the relationship between growth time and QW thickness given in Fig.…”