This work reports on theoretical and experimental investigation of the impact of InAs quantum dots (QDs) position with respect to InGaAs strain reducing layer (SRL). The investigated samples are grown by molecular beam epitaxy and characterized by photoluminescence spectroscopy (PL). The QDs optical transition energies have been calculated by solving the three dimensional Schrödinger equation using the finite element methods and taking into account the strain induced by the lattice mismatch. We have considered a lens shaped InAs QDs in a pure GaAs matrix and either with InGaAs strain reducing cap layer or underlying layer. The correlation between numerical calculation and PL measurements allowed us to track the mean buried QDs size evolution with respect to the surrounding matrix composition. The simulations reveal that the buried QDs’ realistic size is less than that experimentally driven from atomic force microscopy observation. Furthermore, the average size is found to be slightly increased for InGaAs capped QDs and dramatically decreased for QDs with InGaAs under layer.
a b s t r a c tThis paper reports on experimental and theoretical investigation of atyical temperature-dependent photoluminescence properties of InAs quantum dots in close proximity to InGaAs strain-relief underlying quantum well. The impact of a post-growth intermixing process on these properties has been studied. For the as-grown sample, the maximum of the emission band follows a sigmoidal function while the photoluminescence linewidth mimics a V-shape function as the temperature increases, from 11 to 300 K. These behaviors are attributed to thermally activated carrier transfer mechanisms within the inhomogenious distribution of quantum dots. These atypical behaviors are found to disappear progressively with the degree of intermixing and consequent narrowing of the dot size dispersion. The experimental results have been interpreted in the frame of the localized states ensemble model revealing that the large dots size distribution is the main origin of the observed anomalies. Furthermore, the calculations show that the quantum well continuum states act as a transit channel for the redistribution of thermally activated carriers.
The present study reports on the optical properties of epitaxially grown InAs quantum dots (QDs) inserted within an InGaAs strain-reducing layer (SRL). The critical energy states in such QD structures have been identified by combining photoluminescence (PL) and photoluminescence of excitation (PLE) measurements. Carrier lifetime is investigated by time-resolved photoluminescence (TRPL), allowing us to study the impact of the composition of the surrounding materials on the QD decay time. Results showed that covering the InAs QDs with, or embedding them within, an InGaAs SRL increases the carrier dynamics, while a shorter carrier lifetime has been observed when they are grown on top of an InGaAs SRL. Investigation of the dependence of carrier lifetime on temperature showed good stability of the decay time, deduced from the consequences of improved QD confinement. The findings suggest that embedding or capping the QDs with SRL exerts optimization of their room temperature optical properties.
The harmful effect of salinity stress on crops needs to be mitigated. Therefore, the application of microbial inoculum in combination with nanomaterials and methyl salicylate was investigated. Initially, different seeds were exposed to salinity levels treated with variable microbial treatments using different modes of applications. The microbial treatments included application of cyanobacterial strain Cyanothece sp. and the rhizobacterium Enterobacter cloacae, alone or in combination with one another, and a final treatment using combined microbial inoculum supplied with methyl salicylate. Later, different nanomaterials were used, namely, graphene, graphene oxide, and carbon nanotubes in combination with biofertilizers on the highest salinity level. The nanomaterial with microbial treatment and methyl salicylate were applied partly as a mixture in soil and partly as capsules. Results showed that salinity stress had a drastic inhibitory effect on growth parameters, especially at −5 MPa level. Nonetheless, the microbial treatments significantly alleviated the deleterious effect of salinity stress, especially when combined with methyl salicylate. When the nanomaterials were added to biofertilizers at highest salinity level, the inhibitory effect of salinity was mostly alleviated. Smart use of synergistic biofertilizers alongside the right nanomaterial, both encapsulated and in soil, would allow for mitigation and alleviation of inhibitory effect of salinity.
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