GaAs-based 1.3 µm InGaAs quantum dot lasers: A status report

Maximov, M. V.; Ledentsov, N. N.; Ustinov, V. M.; Alfërov, Zh. I.; Bimberg, D.

doi:10.1007/s11664-000-0032-5

Cited by 21 publications

(10 citation statements)

References 68 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In addition, the linewidth enhancement factor of QD lasers can be several times lower than that of a QW laser. Thus, low threshold lasers can more easily utilize QDs . On the other hand, electrons in QDs show discrete atomic‐like energy.…”

Section: Qd Lasermentioning

confidence: 99%

Perovskite quantum dot lasers

Chen

Shi

et al. 2019

InfoMat

107

View full text Add to dashboard Cite

Owing to the excellent properties of perovskite quantum dots (QDs), such as an easy synthesis process, high photoluminescence quantum yields, high defect tolerance, and tunable bandgap with different elements, laser actions have been widely conducted. Over the past few years, several approaches have been used for successfully creating perovskite QD lasers. In this review, we summarize the progress of perovskite QD lasers from the aspects of laser theory, characteristics and applications of QD lasers, advantages of perovskite materials for lasers, factors influencing the QD laser threshold, two-photon pumped QD lasers, and perovskite QD laser stability. At the same time, aiming at existing problems, possible solutions and prospects are presented. K E Y W O R D Slaser optical gain, perovskite, quantum dot, stability, threshold Jie Chen and Wenna Du contributed equally to this work.

show abstract

Section: Qd Lasermentioning

confidence: 99%

Perovskite quantum dot lasers

Chen

Shi

et al. 2019

InfoMat

107

View full text Add to dashboard Cite

show abstract

“…III-V and group IV semiconductor nanostructures such as quantum dots (QDs) are expected for various applications, e. g. a laser diode with a temperature-stable operation [1,2], a single-photon source in quantum-cryptography system [3][4][5][6], a semiconductor optical amplifier (SOA) with high-speed operation [7], a SOA for a slow-light device [8], a solar cell with an ultra-high conversion efficiency [9][10][11], and a memory device with high reliability [12]. From the perspective of their fabrication, phenomena of selforganized nanostructure formation, such as Stranski-Krastanov (SK) growth has been utilized for that.…”

Section: Introductionmentioning

confidence: 99%

Self-Organized Nanostructure Formation of III-V and IV Semiconductors with Bismuth

Okamoto¹

2016

JAN

View full text Add to dashboard Cite

III-V and group IV semiconductor nanostructures such as quantum dots (QDs) are expected for various applications. In this study, effects of Bi supply during the deposition process on the self-organized nanostructure formation were examined for III-V and group IV semiconductor materials. It was found that Bi was successfully acted as a surfactant to form In(Ga)As QDs by MOVPE growth. By this method, QDs with superior optical quality were obtained. The unique features, such as ripening during the In(Ga)As QD formation and the phenomenon during the covering layer growth are discussed. As for the new approach on Ge-based nanostructure formation, high-density dot-like nanostructures were obtained by the low-temperature deposition sequence of Bi and Ge on SiO 2 substrates. As the formation mechanism has not been revealed yet, we suggest hypotheses for that of the Bi and Ge system.

show abstract

“…In(Ga)As quantum dots (QDs) on GaAs substrates are expected for applications such as for a laser diode with a low threshold current and a temperature-stable operation, 1,2) a single-photon source in quantum-cryptography system, [3][4][5][6] a semiconductor optical amplifier (SOA) with high-speed operation, 7) and a SOA for a slow-light device. 8) Another application of QDs that has attracted interest recently is in a solar cell with an ultrahigh conversion efficiency.…”

Section: Introductionmentioning

confidence: 99%

Deep-level transient spectroscopy characterization of In(Ga)As quantum dots fabricated using Bi as a surfactant

Okamoto

Suzuki

Narita

et al. 2014

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The 12 CO J = 4 → 3 to J = 13 → 12 lines of the interstellar medium from nearby galaxies, newly observable with the Herschel SPIRE Fourier transform spectrometer, offer an opportunity to study warmer, more luminous molecular gas than that traced by 12 CO J = 1 → 0. Here we present a survey of 17 nearby infrared-luminous galaxy systems (21 pointings). In addition to photometric modeling of dust, we modeled full 12 CO spectral line energy distributions from J = 1 → 0 to J = 13 → 12 with two components of warm and cool CO gas, and included LTE analysis of, and H 2 lines. CO is emitted from a low-pressure/high-mass component traced by the low-J lines and a high-pressure/low-mass component that dominates the luminosity. We found that, on average, the ratios of the warm/cool pressure, mass, and 12 CO luminosity are 60 ± 30, 0.11 ± 0.02, and 15.6 ± 2.7. The gas-to-dust-mass ratios are <120 throughout the sample. The 12 CO luminosity is dominated by the high-J lines and is 4 × 10 −4 L FIR on average. We discuss systematic effects of single-component and multi-component CO modeling (e.g., single-component J 3 models overestimate gas pressure by ∼0.5 dex), as well as compare to Galactic star-forming regions. With this comparison, we show the molecular interstellar medium of starburst galaxies is not simply an ensemble of Galactic-type giant molecular clouds. The warm gas emission is likely dominated by regions resembling the warm extended cloud of Sgr B2.

show abstract

GaAs-based 1.3 µm InGaAs quantum dot lasers: A status report

Cited by 21 publications

References 68 publications

Perovskite quantum dot lasers

Perovskite quantum dot lasers

Self-Organized Nanostructure Formation of III-V and IV Semiconductors with Bismuth

Deep-level transient spectroscopy characterization of In(Ga)As quantum dots fabricated using Bi as a surfactant

Contact Info

Product

Resources

About