Articles you may be interested inGaAs-based room-temperature continuous-wave 1.59 μ m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy Appl. Phys. Lett. 87, 231121 (2005); 10.1063/1.2140614Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate Appl.Room-temperature lasing at the wavelength of 1.31 m is achieved from the ground state of an InGaAs/GaAs quantum-dot ensemble. At 79 K, a very low threshold current density of 11.5 A/cm 2 is obtained at a wavelength of 1.23 m. The room-temperature lasing at 1.31 m is obtained with a threshold current density of 270 A/cm 2 using high-reflectivity facet coatings. The temperature-dependent threshold with and without high-reflectivity end mirrors is studied, and ground-state lasing is obtained up to the highest temperature investigated of 324 K.
Data are presented on the lasing transitions from InGaAs/GaAs quantum dots that exhibit four well-resolved energy transitions, with the electronic state density of a two-dimensional harmonic oscillator. Lasing has been obtained on the second and third transitions, depending on the cavity (gain) length, with the longest lasing wavelength measured to be 1.19 μm. The temperature dependence of threshold is studied and regions of nearly temperature-independent threshold are found. Interesting aspects of the unique electronic state density for lasers are discussed.
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