Effect of growth temperature on InAs wetting layer grown on (113)A GaAs by molecular beam epitaxy

Sfaxi, L.; Bouzaı̈ene, L.; Sghaier, Halim; Maâref, H.

doi:10.1016/j.jcrysgro.2006.05.042

Cited by 13 publications

(10 citation statements)

References 39 publications

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“…The critical thickness of a heteroepitaxy system has a close relationship with the misfit ( f ) between the epitaxial layer and the substrate, the composition ( x ) of alloy Si 1− x Ge x [7], as well as the growth temperature of heteroepitaxial films. The temperature dependence of the critical thickness of InAs and Ge was observed in experiments; the critical thickness (or called the wetting layer thickness) was found to increase with increasing substrate temperature [8]. Different mechanisms have been proposed to be responsible for the temperature dependence phenomenon, among which the modified energetic mechanism shows the entropic stabilization effect to allow a film that is energetically unstable at low temperatures to become stable at high temperatures (HTs) [9].…”

Section: Germanium: Structure and Propertiesmentioning

confidence: 99%

Germanium epitaxy on silicon

2014

Science and Technology of Advanced Materials

115

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With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In this paper, we describe recent research progress on heteroepitaxy of Ge flat films and self-assembled Ge quantum dots on Si. For film growth, methods of strain modification and lattice mismatch relief are summarized, while for dot growth, key process parameters and their effects on the dot density, dot morphology and dot position are reviewed. The results indicate that epitaxial Ge-on-Si materials will play a bigger role in silicon photonics.

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Section: Germanium: Structure and Propertiesmentioning

confidence: 99%

Germanium epitaxy on silicon

2014

Science and Technology of Advanced Materials

115

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“…As a consequence such an argument cannot predict the temperature dependence of the critical thickness observed in experiments. 13 . In this, work we show that the issues discussed above can be well understood by using an oft-used solid-on-solid atomistic KMC model.…”

Section: Introductionmentioning

confidence: 99%

Mechanisms of Stranski-Krastanov growth

Baskaran

Smereka²

2012

Journal of Applied Physics

159

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Stranski-Krastanov (SK) growth is reported experimentally as the growth mode that is responsible for the transition to three dimensional islands in heteroepitaxial growth. A kinetic Monte Carlo (KMC) model is proposed that can replicate many of the experimentally observed features of this growth mode. Simulations reveal that this model effectively captures the SK transition and subsequent growth. Annealing simulations demonstrate that the wetting layer formed during SK growth is stable, with entropy playing a key role in its stability. It is shown that this model also captures the apparent critical thickness that tends to occur at higher deposition rates and for alloy films (where intermixing is significant). This work shows that the wetting layer thickness increases with increasing temperature whereas the apparent critical thickness decreases with increasing temperature. Both of which are in agreement with experiments.

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“…The shape of the spectrum is a direct result of dispersion in quantum dot sizes. PL and AFM have been carried out for InGaAs QDs prepared on high-index GaAs substrates that confirm this size dispersion [8][9][10][11][12][13][14][15]. This is explained by the presence of surface steps in GaAs (113) substrates, which could influence that the diffusion length of adatoms is a key factor in determining the shape, size, and density of QDs.…”

Section: Resultsmentioning

confidence: 56%

Strain Effects on Optical Properties of (In,Ga)As‐Capped InAs Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (113)A Substrate

Saidi

Bennour

Bouzaı̈ene

et al. 2011

International Journal of Spectroscopy

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We have investigated the optical properties of InAs/GaAs (113)A quantum dots grown by molecular beam epitaxy (MBE) capped by (In,Ga)As. Reflection high-energy electron diffraction (RHEED) is used to investigate the formation process of InAs quantum dots (QDs). A broadening of the PL emission due to size distribution of the dots, when InAs dots are capped by GaAs, was observed. A separation between large and small quantum dots, when they are encapsulated by InGaAs, was shown due to hydrostatic and biaxial strain action on large and small dots grown under specifically growth conditions. The PL polarization measurements have shown that the small dots require an elongated form, but the large dots present a quasi-isotropic behavior.

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Effect of growth temperature on InAs wetting layer grown on (113)A GaAs by molecular beam epitaxy

Cited by 13 publications

References 39 publications

Germanium epitaxy on silicon

Germanium epitaxy on silicon

Mechanisms of Stranski-Krastanov growth

Strain Effects on Optical Properties of (In,Ga)As‐Capped InAs Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (113)A Substrate

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