Iron-boron pairing kinetics in illuminated p-type and in boron/phosphorus co-doped n-type silicon

Abstract

Iron-boron (FeB) pairing is observed in the n-type region of a boron and phosphorus co-doped silicon sample which is unexpected from the FeB pair model of Kimerling and Benton. To explain the experimental data, the existing FeB pair model is extended by taking into account the electronic capture and emission rates at the interstitial iron (Fei) trap level as a function of the charge carrier densities. According to this model, the charge state of the Fei may be charged in n-type making FeB association possible. Further, FeB pair formation during illumination in p-type silicon is investigated. This permits the determination of the charge carrier density dependent FeB dissociation rate and in consequence allows to determine the acceptor concentration in the co-doped n-type silicon by lifetime measurement.

Modeling of light-induced degradation due to Cu precipitation in p-type silicon. II. Comparison of simulations and experiments

“…Since measuring a single point in the LID curve involves two flashes, it is likely that in the beginning of the LID curve with short measurement intervals the majority of Fe exists as Fe i , whereas at the end when the intervals are longer (!120 min) Fe-B pairs dominate since the majority of Fe i is expected to re-associate. 24 Nevertheless, the effect of Fe is small at low s eff when Cu precipitates are the main limiting defects (maximum increase of s eff upon full Fe-B dissociation to Fe i diminishes to $0.7 ls at s eff ¼ 50 ls). In lower doped low-res Cz in Fig.…”

Dissociation and Formation Kinetics of Iron–Boron Pairs in Silicon after Phosphorus Implantation Gettering

“…In contrast to Rd, the association rate Ra tends to increase slightly in the range 10 -4 -10 -3 [19,20] discussed the effect of illumination intensity on the association rate and explained the origin of the appearance of Coulombic attraction between iron and boron even under illumination, by using an extension of the model developed by Istratov et al [4]. The experimental findings were interpreted in view of the illumination dependent quasi-Fermi level position and the steady state between iron, boron and excess charge carriers.…”

“…shows the experimental Ra values obtained for studied samples, as well as the theoretical plot of Ra, which is the inverse of association time constant τa given by the following equation[19,22]: Fei) is the diffusion coefficient of interstitial iron at temperature T, Emig is the thermal activation energy of the Fei migration (Emig ≈ 0.66 eV), NA is the boron concentration, ε is the relative dielectric permittivity of silicon, ε0 is the dielectric permittivity of vacuum, kB is the Boltzmann constant and q is the elementary electric charge.…”

The Role of Charge and Recombination‐Enhanced Defect Reaction Effects in the Dissociation of FeB Pairs in p‐Type Silicon under Carrier Injection

“…The reaction rates will therefore not be constant under these conditions, making the analysis complicated and unreliable. In contrast, the analysis of the dynamics (steady state) [ 8 ] can potentially provide more unambiguous information on the reaction rates. Such analysis is based on the fact that a lower illumination intensity dissociates FeB pairs less completely, resulting in a steady‐state balance between dissociation and association, where FeB pairs and isolated Fe i coexist.…”

“…Such analysis is based on the fact that a lower illumination intensity dissociates FeB pairs less completely, resulting in a steady-state balance between dissociation and association, where FeB pairs and isolated Fe i coexist. [8] In this study, we aim to gain a deeper understanding of the roles that the charge effect and REDR effect play in FeB dissociation under injection. The two effects will be more distinctly separated in comparison with previous reports.…”