Light‐induced degradation of charge carrier lifetime was observed in indium‐doped silicon. After defect formation, an annealing step at 200 °C for 10 min deactivates the defect and the initial charge carrier lifetime is fully recovered. The observed time range of the defect kinetics is similar to the well known defect kinetics of the light‐induced degradation in boron‐doped samples. Differences between defect formation in boron‐ and indium‐doped silicon are detected and discussed. A new model based on an acceptor self‐interstitial ASi–Sii defect is proposed and established with experimental findings and existing ab‐initio simulations. Charge carrier lifetime degradation during light soaking of indium‐doped samples with different oxygen concentrations. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line) was found to depend on the position of a silicon interstitial rich region, the existence of a SiNx:H/SiOx stack and on characteristic illumination and annealing steps. These results led to the conclusion that silicon interstitials are involved in the defect and that hydrogen impacts the defect responsible for the P line. By applying an unique illumination and annealing cycle we were able to link the P line defect with a defect responsible for degradation of charge carrier lifetime in indium as well as boron doped silicon. We deduced a defect model consisting of one acceptor and one silicon interstitial atom denoted by ASi-Sii, which is able to explain the experimental data of the P line as well as the light-induced degradation in indium and boron doped silicon. Using this model we identified the defect responsible for the P line as InSi-Sii in neutral charge state and C2v configuration.

Light‐induced degradation (LID) is investigated in indium doped silicon by time and temperature dependent carrier lifetime measurements. Different transitions rates and activation energies were measured and interpreted within the ASi‐Sii defect model. The case of indium acceptors is compared to the case of boron. Results are discussed within the frame of a comparison between ASi‐Sii and ASi‐Fei defects. It was found that reported dependencies of the transitions rates of the ASi‐Sii defect on the hole density support defect models which are based on defect configuration changes. An in‐depth explanation of the ASi‐Sii defect model is given and possible errors related to the measurement of transition rates are discussed.

Iron-boron (FeB) pairing is observed in the n-type region of a boron and phosphorus co-doped silicon sample which is unexpected from the FeB pair model of Kimerling and Benton. To explain the experimental data, the existing FeB pair model is extended by taking into account the electronic capture and emission rates at the interstitial iron (Fei) trap level as a function of the charge carrier densities. According to this model, the charge state of the Fei may be charged in n-type making FeB association possible. Further, FeB pair formation during illumination in p-type silicon is investigated. This permits the determination of the charge carrier density dependent FeB dissociation rate and in consequence allows to determine the acceptor concentration in the co-doped n-type silicon by lifetime measurement.