Activation energies of the In Si ‐Si i defect transitions obtained by carrier lifetime measurements

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The composition of the defect, which is responsible for the boron–oxygen‐related light‐induced degradation (BO‐LID) of the carrier lifetime in silicon, still remains an unresolved issue. It has been recently suggested that the BO‐LID is due to the ASi‐Sii‐defect. Within this idea, the creation and discreation are governed by the interstitial silicon concentration. Annealing and electron beam (EB) irradiation are applied to influence the interstitial silicon concentration. The BO‐LID is observed in the case of diffusion‐oxygenated FZ (DOFZ) boron‐doped silicon after annealing at 650 and 450 °C for 4 h, respectively. A nearly complete discreation of the BO‐LID defect is found for the long‐term high temperature (16 h at 1050 °C) anneal. This discreation process is explained by the diffusion of the interstitial silicon atoms to other sinks such as the wafer surfaces. The degradation of the carrier lifetime due to illumination after the EB irradiation is unambiguously related to the BO‐LID phenomenon.

Section: Resultssupporting

confidence: 82%

Section: Annealingsupporting

confidence: 89%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Light‐Induced Degradation in Annealed and Electron Irradiated Silicon

Lauer

Krischok

Klein

et al. 2019

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Indium‐Doped Silicon for Solar Cells—Light‐Induced Degradation and Deep‐Level Traps

Guzman

Markevich

Hawkins

et al. 2021

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Indium‐doped silicon is considered a possible p‐type material for solar cells to avoid light‐induced degradation (LID), which occurs in cells made from boron‐doped Czochralski (Cz) silicon. Herein, the defect reactions associated with indium‐related LID are examined and a deep donor is detected, which is attributed to a negative‐U defect believed to be InsO2. In the presence of minority carriers or above bandgap light, the deep donor transforms to a shallow acceptor. An analogous transformation in boron‐doped material is related to the BsO2 defect that is a precursor of the center responsible for BO LID. The electronic properties of InsO2 are determined and compared to those of the BsO2 defect. Structures of the BsO2 and InsO2 defects in different charges states are found using first‐principles modeling. The results of the modeling can explain both the similarities and the differences between the BsO2 and InsO2 properties.

The A_Si–Si_i Defect Model of Light‐Induced Degradation (LID) in Silicon: A Discussion and Review

Lauer

Peh

Schulze

et al. 2022

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The ASi–Sii defect model as one possible explanation for light‐induced degradation (LID) in typically boron‐doped silicon solar cells, detectors, and related systems is discussed and reviewed. Starting from the basic experiments which led to the ASi–Sii defect model, the ASi–Sii defect model (A: boron, or indium) is explained and contrasted to the assumption of a fast‐diffusing so‐called “boron interstitial.” An LID cycle of illumination and annealing is discussed within the conceptual frame of the ASi–Sii defect model. The dependence of the LID defect density on the interstitial oxygen concentration is explained within the ASi–Sii defect picture. By comparison of electron paramagnetic resonance data and minority carrier lifetime data related to the assumed fast diffusion of the “boron interstitial” and the annihilation of the fast LID component, respectively, the characteristic EPR signal Si‐G28 in boron‐doped silicon is related to a specific ASi–Sii defect state. Several other LID‐related experiments are found to be consistent with an interpretation by an ASi–Sii defect.