Dissociation and Formation Kinetics of Iron–Boron Pairs in Silicon after Phosphorus Implantation Gettering

Abstract

This paper reports the results of a systematic study on the kinetics of dissociation and formation of iron-boron (FeB) pairs in boron-doped Czochralski silicon after phosphorus implantation gettering of iron at different temperatures. The aim of this study is threefold: (i) investigation of the dissociation kinetics of the FeB pairs by a standardized illumination as a function of the iron concentration after gettering process, (ii) study of the kinetics of their association, and (iii) extraction of the characteristic parameters of these two phenomena for gettered samples, in particular the effective time constants of dissociation and association as well as the constant of material, which describes the dissociation rate well in the absence of other recombination channels.

Estimation for iron contamination in Si solar cell by ideality factor: Deep neural network approach

“…This interval included the time required to set the temperature after illuminationinduced heating and the time of measurement. According to previous studies, 42,55 the characteristic association time of FeB pairs at T ¼ 340 K and N B ¼ 1:4 Á 10 15 cm À3 is about 600 s. That is, despite the potentially higher accuracy of the DNN FeFeB À Fe predictions (shown in the previous section), the practical application of this approach is more complicated.…”

The Role of Charge and Recombination‐Enhanced Defect Reaction Effects in the Dissociation of FeB Pairs in p‐Type Silicon under Carrier Injection

“…[ 4 ] The reversible dissociation and association reactions can be described as follows [ 3,5 ] with the rate constants k d and k a , respectively. The dissociation and association reactions have been investigated in numerous studies, [ 5–16 ] mostly within the framework of chemical interactions in silicon developed by Reiss et al for Li–B pairing. [ 17 ]…”

“…The parameter U per FeB pair is deemed to be the most suitable independent variable to show the REDR effect. In comparison, the generation rate [ 8,14,15 ] and the injection current density, [ 13 ] which are more frequently used in the literature, are less ideal for this purpose because the generated carriers will also recombine through other recombination channels, including the unavoidable isolated Fe i , without contributing to the enhancement of the pair dissociation.…”

“…with the rate constants k d and k a , respectively. The dissociation and association reactions have been investigated in numerous studies, [5][6][7][8][9][10][11][12][13][14][15][16] mostly within the framework of chemical interactions in silicon developed by Reiss et al for Li-B pairing. [17] In p-Si with [B]>1 Â 10 15 cm À3 , almost all Fe i atoms are positively charged at room temperature in the dark.…”