InGaN/GaN resonant-cavity LED including an AlInN/GaN Bragg mirror

Dorsaz, J.; Carlin, J.‐F.; Zellweger, Christoph; Gradečak, Silvija; Ilegems, M.

doi:10.1002/pssa.200405042

Cited by 34 publications

(25 citation statements)

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“…To check whether the inclusion of an AlInN/GaN DBR in a light emitting device would affect the crystalline quality and the internal efficiency of active InGaN quantum wells, we demonstrate now the fabrication of a microcavity light emitting diode (MCLED) having a lattice-matched bottom AlInN/GaN DBR [20].…”

Section: Microcavity Light Emitting Diodementioning

confidence: 99%

Progresses in III‐nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

Carlin

Zellweger

Dorsaz

et al. 2005

Physica Status Solidi (b)

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115

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We propose to use lattice-matched AlInN/GaN to replace the Al(Ga)N/GaN material system for III-nitride Bragg reflectors, despite the poor material quality of AlInN reported until very recently. We report an improvement of AlInN material that allowed for successful fabrication of a microcavity light emitting diode, a distributed Bragg reflector with 99.4% reflectivity and microcavities with a quality factor over 800. These results establish state-of-the-art values for III-nitrides, and announce the future importance of AlInN in GaN-based optoelectronics.

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Section: Microcavity Light Emitting Diodementioning

confidence: 99%

Progresses in III‐nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

Carlin

Zellweger

Dorsaz

et al. 2005

Physica Status Solidi (b)

Self Cite

150

115

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“…During the last decade alloys with InN have become extremely important as materials for light emitting devices in the visible range. InGaN is used extensively in visible region LEDs and lasers [9], and AlInN seems to be a superior material for mirrors in vertical cavity surface emitting devices [10]. In these cases a rather limited fraction of In is typically employed (10%-20%), and the growth process (typically MOCVD) can be controlled reasonably well even in a production environment.…”

Section: A Brief Summary Of Inn Properties As Reflected In the Recenmentioning

confidence: 99%

Optical properties of InN—the bandgap question

Ḿonemar

Paskov

Kasic

2005

Superlattices and Microstructures

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“…Due to their large exciton binding energy, GaN quantum dots enable stable single-photon emission even at room temperature [3]. Furthermore, the increase of the spontaneous recombination rate can be used also in RCLEDs for an enhanced emission intensity and directionality [4]. Another attractive application relying on nitride-based microcavities is vertical cavity surface emitting lasers which provide several advantages against standard edge-emitters, like lower thresholds, single-mode lasing or a circular beam profile [5].…”

Section: Introductionmentioning

confidence: 99%