Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality

Berger, Christoph; Dadgar, A.; Bläsing, J.; Lesnik, A. G.; Veit, Peter; Schmidt, Gordon; Hempel, T.; Christen, J.; Krost, A.; Strittmatter, A.

doi:10.1016/j.jcrysgro.2014.09.008

Cited by 24 publications

(16 citation statements)

References 18 publications

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“…Subsequently, AlInN DBRs were pursued by two groups. Otto-von-Guericke-Universität Magdeburg studied the critical conditions of lattice matching between AlInN and GaN [76]. They also proposed a two-temperature growth procedure [77] and reported the need to use GaN capping layer to improve the interfacial transitions.…”

Section: Alinn/gan Dbrsmentioning

confidence: 99%

“…Otto-von-Guericke-Universität Magdeburg studied the critical conditions of lattice matching between AlInN and GaN [75]. They also proposed a two-temperature growth procedure [76] and reported the need to use GaN capping layer to improve the interfacial transitions. Meijo University performed very detailed study of OMVPE growth conditions for AlInN and identified a new window for high growth rate (~0.5 µm/h) [77].…”

Section: Alinn/gan Dbrsmentioning

confidence: 99%

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Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

2019

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A distributed Bragg reflector (DBR) is a key building block in the formation of semiconductor microcavities and vertical cavity surface emitting lasers (VCSELs). The success in epitaxial GaAs DBR mirrors paved the way for the ubiquitous deployment of III-V VCSELs in communication and mobile applications. However, a similar development of GaN-based blue VCSELs has been hindered by challenges in preparing DBRs that are mass producible. In this article, we provide a review of the history and current status of forming DBRs for GaN VCSELs. In general, the preparation of DBRs requires an optimization of epitaxy/fabrication processes, together with trading off parameters in optical, electrical, and thermal properties. The effort of epitaxial DBRs commenced in the 1990s and has evolved from using AlGaN, AlN, to using lattice-matched AlInN with GaN for DBRs. In parallel, dielectric DBRs have been studied since 2000 and have gone through a few design variations including epitaxial lateral overgrowth (ELO) and vertical external cavity surface emitting lasers (VECSEL). A recent trend is the use of selective etching to incorporate airgap or nanoporous GaN as low-index media in an epitaxial GaN DBR structure. The nanoporous GaN DBR represents an offshoot from the traditional epitaxial approach and may provide the needed flexibility in forming manufacturable GaN VCSELs. The trade-offs and limitations of each approach are also presented.

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Section: Alinn/gan Dbrsmentioning

confidence: 99%

Section: Alinn/gan Dbrsmentioning

confidence: 99%

Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

2019

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“…InAlN thin films find potential applications in light emitting diodes, laser diodes, photodiodes, solar cells, detectors, Bragg reflectors and sensors [3][4][5]. Furthermore, InAlN/GaN hetrostructures are found to be quite useful in the high frequency and high speed electronic devices [6][7].…”

Section: Introductionmentioning

confidence: 99%

Post-deposition annealing of magnetron sputtered InAlN film at different temperatures

Afzal

Devarajan

Ibrahim

2015

Journal of Alloys and Compounds

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“…It is difficult to find two materials with high refractive index contrast that are lattice-matched to each other, and in addition have high electrical conductivities. High peak reflectivities (>99%) have been reached with DBRs in (Al)GaN/Al(Ga)N 50-53 as well as in AlInN/GaN 54,55 . An AlN/GaN DBR has a higher refractive index contrast (about 12% at 420 nm), which is close to that of AlGaAs DBRs, and as a result the 99% stopband width is about 22 nm if 22 mirror pairs are used.…”

Section: Mirrorsmentioning

confidence: 97%

Progress and challenges in electrically pumped GaN-based VCSELs

et al. 2016

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The Vertical-Cavity Surface-Emitting Laser (VCSEL) is an established optical source in short-distance optical communication links, computer mice and tailored infrared power heating systems. Its low power consumption, easy integration into two-dimensional arrays, and low-cost manufacturing also make this type of semiconductor laser suitable for application in areas such as high-resolution printing, medical applications, and general lighting. However, these applications require emission wavelengths in the blue-UV instead of the established infrared regime, which can be achieved by using GaN-based instead of GaAs-based materials. The development of GaN-based VCSELs is challenging, but during recent years several groups have managed to demonstrate electrically pumped GaN-based VCSELs with close to 1 mW of optical output power and threshold current densities between 3-16 kA/cm 2 . The performance is limited by challenges such as achieving high-reflectivity mirrors, vertical and lateral carrier confinement, efficient lateral current spreading, accurate cavity length control and lateral optical mode confinement. This paper summarizes different strategies to solve these issues in electrically pumped GaN-VCSELs together with state-of-the-art results. We will highlight our work on combined transverse current and optical mode confinement, where we show that many structures used for current confinement result in unintentionally optically anti-guided resonators. Such resonators can have a very high optical loss, which easily doubles the threshold gain for lasing. We will also present an alternative to the use of distributed Bragg reflectors as high-reflectivity mirrors, namely TiO2/air high contrast gratings (HCGs). Fabricated HCGs of this type show a high reflectivity (>95%) over a 25 nm wavelength span.

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Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality

Cited by 24 publications

References 18 publications

Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

Post-deposition annealing of magnetron sputtered InAlN film at different temperatures

Progress and challenges in electrically pumped GaN-based VCSELs

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