Carbon‐doping in the concentration range from [C] = 5 × 1017 to 1.2 × 1019 cm−3 is employed to achieve semi‐insulating properties of GaN layers as required for electronic power devices. Using propane as a carbon precursor, an independent analysis of the carbon incorporation during growth and its impact on electrical properties of the layers was obtained as growth parameters for optimum GaN quality could be applied. We observe that C is within precision of measurements fully incorporated in GaN as compensating deep acceptor. In a series of Si + C co‐doped samples, semi‐insulating properties were obtained for [C] > [Si] and the compensation efficiency for electrons is around unity. Through the extrinsic C‐doping technique previous ambiguous results on electrical and optical properties of GaN:C layers are clarified.

We present an approach called pulsed multiline excitation (PME) for measurements of multicomponent, fluorescence species and demonstrate its application in capillary electrophoresis for DNA sequencing. To fully demonstrate the advantages of PME, a fluorescent dye set has been developed whose absorption maxima span virtually the entire visible spectrum. Unlike emission wavelength-dependent approaches for identifying fluorescent species, the removal of the spectral component in PME confers a number of advantages including higher and normalized signals from all dyes present in the assay, the elimination of spectral cross-talk between dyes, and higher signal collection efficiency. Base-calling is unambiguously determined once dye mobility corrections are made. These advantages translate into significantly enhanced signal quality as illustrated in the primary DNA sequencing data and provide a means for achieving accurate base-calling at lower reagent concentrations.

Intense emission from GaN islands embedded in AlN resulting from GaN/AlN quantum well growth is directly resolved by performing cathodoluminescence spectroscopy in a scanning transmission electron microscope. Line widths down to 440 μeV are measured in a wavelength region between 220 and 310 nm confirming quantum dot like electronic properties in the islands. These quantum dot states can be structurally correlated to islands of slightly enlarged thicknesses of the GaN/AlN quantum well layer preferentially formed in vicinity to dislocations. The quantum dot states exhibit single photon emission in Hanbury Brown-Twiss experiments with a clear antibunching in the second order correlation function at zero time delay.

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