InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier andfT/fmaxof 260/220 GHz

Wang, Ronghua; Li, Guowang; Karbasian, Golnaz; Guo, Jia; Faria, Faiza Afroz; Hu, Zongyang; Yue, Yuanzheng; Verma, Jai; Laboutin, Oleg; Cao, Yu; Johnson, Wayne; Snider, Gregory L.; Fay, Patrick; Jena, Debdeep; Xing, Huili Grace

doi:10.7567/apex.6.016503

Cited by 42 publications

(26 citation statements)

References 19 publications

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“…This is consistent with the observation that InGaAs-channel HEMTs exhibit higher speed than GaN or Si based FETs. To further improve the GaN HEMT speed, it is paramount to seek approaches that enhance injection velocity thus g m,int , such as the use of InGaN [12] or isotope-disordered channels [13]. Aggressive gate length scaling and optimization of GaN HEMT has led to impressive progress reaching device speed about 400 GHz.…”

Section: Gan Based Hemt Devices Towards Thzmentioning

confidence: 99%

THz devices based on 2D electron systems

et al. 2015

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In two-dimensional electron systems with mobility on the order of 1,000 -10,000 cm 2 /Vs, the electron scattering time is about 1 ps. For the THz window of 0.3 -3 THz, the THz photon energy is in the neighborhood of 1 meV, substantially smaller than the optical phonon energy of solids where these 2D electron systems resides. These properties make the 2D electron systems interesting as a platform to realize THz devices. In this paper, I will review 3 approaches investigated in the past few years in my group toward THz devices. The first approach is the conventional high electron mobility transistor based on GaN toward THz amplifiers. The second approach is to employ the tunable intraband absorption in 2D electron systems to realize THz modulators, where I will use graphene as a model material system. The third approach is to exploit plasma wave in these 2D electron systems that can be coupled with a negative differential conductance element for THz amplifiers/sources/detectors.

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Section: Gan Based Hemt Devices Towards Thzmentioning

confidence: 99%

THz devices based on 2D electron systems

et al. 2015

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“…Yachao Zhang et al presented the InGaN double channel (DC) HEMT on Sapphire substrate [30] and the device shown stable transconductance in spite of low FT/FMAX. In recent years, InGaN channel based HEMTs proven its superior performance than conventional GaN channel based HEMTs [30][31][32][33][34].…”

Section: Introductionmentioning

confidence: 99%

“…The lower electron mass and narrow bandgap of InGaN material enhance the carrier mobility and creates the deeper potential well with wide bandgap material. And also, the InGaN channel HEMTs had demonstrated superior performance at high temperature, current collapse reduction, low noise, and suppression of virtual gate effects [30][31][32][33][34]. However, the breakdown voltage of the InGaN channel-based devices is relatively lower than GaN channel based HEMTs because of narrow bandgap.…”

Section: Introductionmentioning

confidence: 99%

Design and Analysis of AlGaN/InGaN/GaN and InAlN/InGaN/GaN HEMTs for High-Power Wide Bandwidth Applications

Revathy

Boopathi

Nirmal

2021

Preprint

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We present the stable transconductance operation of InGaN/GaN composite channel based HEMTs. LG = 55 nm AlGaN/InGaN/GaN (Device A) and InAlN/InGaN/GaN (Device B) HEMTs were proposed and investigated its operational characteristics using numerical simulation. Existence of deeper potential well, the proposed HEMTs possesses high 2DEG (two-dimensional electron gas) density, enhanced electron confinement, and improved electron mobility. As a result, the device shows enhanced current density, and high linearity operation. Furthermore, Al0.04Ga0.96N superlative back-barrier significantly reduces the buffer leakage current resulting in improved breakdown voltage (VBR). The proposed device A (device B) exhibited 2.81 (5) A/mm of output current density, 0.669 (0.7273) S/mm, 4 (7) V of GVS (gate voltage swing), 55.3 (43.5) V of breakdown voltage, and 252/263 (275/289) GHz of FT/FMAX. This excellent device performances illustrates the potential of InGaN/GaN channel HEMTs for future wide-band telecommunication, radio astronomy, radar and space applications.

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“…Laboutin et al designed AlInGaN/AlN/InGaN/GaN high electron mobility transistor (HEMT) structures and reported the record electron mobilities from 1070 to 1290 cm 2 V · s −1 with sheet carrier density of ≈2 × 10 13 cm −2 in In x Ga 1‐x N ( x = 0.05–0.1) channel. Ronghua Wang et al fabricated a depletion‐mode HEMT with 11 nm quaternary In 0.13 Al 0.83 Ga 0.04 N barrier and 5 nm In 0.05 Ga 0.95 N channel on SiC substates and featured a record high

\sqrt{f_{T} \cdot f_{normalmax}}

of 239 GHz for InGaN channel HEMTs. Zhang et al adopted a two‐step AlN interlayer in AlGaN/InGaN heterostructures to improve the quality of the interface between barrier and buffer, and obtained a record highest channel electron mobility of 1681 cm 2 V · s −1 .…”

Section: Introductionmentioning

confidence: 99%

Theoretical Investigation on Electron Mobility in AlInGaN/InGaN Heterostructures

2019

Physica Status Solidi (b)

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The dependences of electron mobility in AlInGaN/InGaN heterostructure on the barrier and channel alloy compositions and on temperature are investigated including six scattering processes: acoustic deformation potential (DP) scattering, piezoelectric field (PE) scattering, polar optical phonons (PO) scattering, dislocation impurity (DIS) scattering, interface roughness (IRF) scattering, and alloy disorder (ADO) scattering. The results show that ADO scattering is the most important scattering mechanism, and specifically channel alloy disorder gets severer than barrier alloy disorder except for InGaN channels with very low indium content (near 0) or extremely high indium mole fraction (near 1). The variations of the barrier strain, two‐dimensional electron gas (2DEG) density, 2DEG mobility, and conductivity in AlInGaN/In0.04Ga0.96N heterostructure with full barrier alloy composition are summarized. The results indicate that relatively large aluminum content and small indium mole fraction are desired for higher conductivity. By comparing the temperature‐dependent transport properties of Al0.83In0.13Ga0.04N/InGaN heterostructures with different InGaN compositions, we find that it is the ADO scattering and PO scattering that determine 2DEG mobility change and the mobility exhibits a weaker dependence on temperature with increasing indium mole fraction in InGaN channel.

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InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier andf_T/f_maxof 260/220 GHz

Cited by 42 publications

References 19 publications

THz devices based on 2D electron systems

THz devices based on 2D electron systems

Design and Analysis of AlGaN/InGaN/GaN and InAlN/InGaN/GaN HEMTs for High-Power Wide Bandwidth Applications

Theoretical Investigation on Electron Mobility in AlInGaN/InGaN Heterostructures

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