We present the stable transconductance operation of InGaN/GaN composite channel based HEMTs. LG = 55 nm AlGaN/InGaN/GaN (Device A) and InAlN/InGaN/GaN (Device B) HEMTs were proposed and investigated its operational characteristics using numerical simulation. Existence of deeper potential well, the proposed HEMTs possesses high 2DEG (two-dimensional electron gas) density, enhanced electron confinement, and improved electron mobility. As a result, the device shows enhanced current density, and high linearity operation. Furthermore, Al0.04Ga0.96N superlative back-barrier significantly reduces the buffer leakage current resulting in improved breakdown voltage (VBR). The proposed device A (device B) exhibited 2.81 (5) A/mm of output current density, 0.669 (0.7273) S/mm, 4 (7) V of GVS (gate voltage swing), 55.3 (43.5) V of breakdown voltage, and 252/263 (275/289) GHz of FT/FMAX. This excellent device performances illustrates the potential of InGaN/GaN channel HEMTs for future wide-band telecommunication, radio astronomy, radar and space applications.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.