Abstract:We present the stable transconductance operation of InGaN/GaN composite channel based HEMTs. LG = 55 nm AlGaN/InGaN/GaN (Device A) and InAlN/InGaN/GaN (Device B) HEMTs were proposed and investigated its operational characteristics using numerical simulation. Existence of deeper potential well, the proposed HEMTs possesses high 2DEG (two-dimensional electron gas) density, enhanced electron confinement, and improved electron mobility. As a result, the device shows enhanced current density, and high linearity ope… Show more
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