Improved EOT and leakage current for metal–insulator–metal capacitor stacks with rutile TiO2

Popovici, Mihaela; Kim, Min‐Soo; Tomida, Kazuyuki; Swerts, Johan; Tielens, Hilde; Moussa, Alain; Richard, Olivier; Bender, Hugo; Franquet, Alexis; Conard, Thierry; Altimime, L.; Elshocht, Sven Van; Kittl, J. A.

doi:10.1016/j.mee.2011.03.063

Cited by 27 publications

(23 citation statements)

References 10 publications

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“…Impurity levels were 2 at.% for C and 7 at.% for H for films fabricated at 200 o C, and only fractions of a percent above 200 o C [618]. Film growth via the Ti(OMe)4/O3 process has been demonstrated between 250 and 300 o C [628][629][630][631]. Popovici et al grew rutile films on RuO2 substrates at 250 o C with a GPC of 0.4 Å/cycle [628,629,631], while at 300 o C a similar GPC of 0.4 Å/cycle for films of the anatase structure was reported [630].…”

Section: Ti(ome)4 With H2o or O3 And Ti(o T Bu)4 With O3mentioning

confidence: 90%

“…Film growth via the Ti(OMe)4/O3 process has been demonstrated between 250 and 300 o C [628][629][630][631]. Popovici et al grew rutile films on RuO2 substrates at 250 o C with a GPC of 0.4 Å/cycle [628,629,631], while at 300 o C a similar GPC of 0.4 Å/cycle for films of the anatase structure was reported [630]. The Ti(O t Bu)4 precursor has not received much attention, it has however been used together with O3 in a batch reactor showing a low GPC value of 0.16 Å/cycle [561].…”

Section: Ti(ome)4 With H2o or O3 And Ti(o T Bu)4 With O3mentioning

confidence: 99%

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Titanium dioxide thin films by atomic layer deposition: a review

Niemelä

Marín

Karppinen

2017

Semicond. Sci. Technol.

137

116

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Within its rich phase diagram titanium dioxide is a truly multifunctional material with a property palette that has been shown to span from dielectric to transparent-conducting characteristics, in addition to the well-known catalytic properties. At the same time down-scaling of microelectronic devices has led to an explosive growth in research on atomic layer deposition (ALD) of a wide variety of frontier thin-film materials, among which TiO2 is one of the most popular ones. In this topical review we summarize the advances in research of ALD of titanium dioxide starting from the chemistries of the over 50 different deposition routes developed for TiO2 and the resultant structural characteristics of the films. We then continue with the doped ALD-TiO2 thin films from the perspective of dielectric, transparent-conductor and photocatalytic applications. Moreover, in order to cov er the lat est tr ends in t he research f ield, both the var iously constr ucted TiO2 nanostructures enabled by ALD and the Ti-based hybrid inorganic-organic films grown by the emerging ALD/MLD (combined atomic/molecular layer deposition) technique are discussed.

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Section: Ti(ome)4 With H2o or O3 And Ti(o T Bu)4 With O3mentioning

confidence: 90%

Section: Ti(ome)4 With H2o or O3 And Ti(o T Bu)4 With O3mentioning

confidence: 99%

Titanium dioxide thin films by atomic layer deposition: a review

Niemelä

Marín

Karppinen

2017

Semicond. Sci. Technol.

137

116

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“…In addition, high work-function ruthenium electrode material is needed, which can become a cost issue. 2,3 Issues concerning STO are related to the difficulty to obtain composition uniformity as well as to the possibility of crack formation upon crystallization leading to high leakage current. 4 Nb 2 O 5 is a wide bandgap (3.6 eV) dielectric material with a high index of refraction (n = 2.4) and permittivity (29 to 200 depending of the crystalline phase 5 ).…”

mentioning

confidence: 99%

Optical and Dielectric Characterization of Atomic Layer Deposited Nb2O5 Thin Films

Blanquart

Kukli

Niinistö

et al. 2012

ECS Solid State Letters

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“…Both dielectrics (TiO 2 and STO) depositions were carried out by ALD at 250 o C in Sr( t Bu 3 Cp) 2 -Ti(OCH 3 ) 4 -H 2 O (STO) and Ti(OCH 3 ) 4 -H 2 O (TiO 2 ) reaction systems, respectively [9,5].…”

Section: Methodsmentioning

confidence: 99%

(Invited) Advanced Dielectrics Targeting 2X DRAM MIM Capacitors

Popovici¹,

Swerts²,

Aoulaiche³

et al. 2013

ECS Trans.

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Reducing the equivalent oxide thickness below 0.45 nm at low leakage current density of 10 -7 A/cm 2 at ± 1V is required for DRAM MIM capacitors for the 2X node. This can be achieved using a bi-layer stack TiO 2 /Sr rich STO (62%), which is converted into a STO layer having 54% Sr content after crystallization anneal. The impact of TiO 2 content in the initial bi-layer on the grain morphology and electrical properties of the final stack was studied. An optimal TiO 2 thickness range was identified, correlated with the grain size. Ti richer STO results in a larger amount of nanocracks and higher leakage current. The electrode/STO interface is critical in reducing the leakage current. In this regard, Ru has shown improved properties as compared to TiN. Moreover, Sr diffusion into Ru identified by SIMS measurements seems to have a beneficial effect on improving the interface and electrical properties.

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Improved EOT and leakage current for metal–insulator–metal capacitor stacks with rutile TiO2

Cited by 27 publications

References 10 publications

Titanium dioxide thin films by atomic layer deposition: a review

Titanium dioxide thin films by atomic layer deposition: a review

Optical and Dielectric Characterization of Atomic Layer Deposited Nb2O5 Thin Films

(Invited) Advanced Dielectrics Targeting 2X DRAM MIM Capacitors

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