Titanium dioxide thin films by atomic layer deposition: a review

Niemelä, Janne-Petteri; Marín, Gerardo; Karppinen, Maarit

doi:10.1088/1361-6641/aa78ce

Cited by 128 publications

(122 citation statements)

References 821 publications

(895 reference statements)

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“…The pulse time needs to be long enough to guarantee saturated adsorption of a monolayer of precursor onto the substrate and let the precursors diffuse deep enough into a porous structure like PP membrane. [ 19 ] A sufficient purging time is required as well to guarantee the complete removal of the gas phase byproducts and unreacted precursors.…”

Section: Principle and Advantages Of Ald Techniquementioning

confidence: 99%

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Atomic Layer Deposition for Polypropylene Film Engineering—A Review

Song

2020

Macro Materials & Eng

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Polypropylene (PP) polymers are used extensively as dielectric layers, packaging films, and separation membranes, etc. Structure, chemistry, and surface features of PP films dominate their performance and durability. Modification of PP films is carried out using atomic layer deposition (ALD) among other techniques to coat uniform layer of nanometer inorganic material on the surface and inside the pores of PP films to serve the purpose of target applications better. Controlling the reaction temperature, precursor pulsing time, and number of cycles during deposition predominate the thickness, morphology, and composition of the coated layer and hence the performance of PP films. Overall, the ALD technique has been proven to be advantageous in advancing PP film properties such as hydrophilicity, UV resistance, membrane separators, dielectric and mechanical strength, etc., primarily through the controllable formation of nanometer coating on PP films. This review discusses the recent advancements and prospective of ALD in the modification and functionalization of PP films for various applications to provide some insights and motivations to design high‐performance novel PP films by well leveraging the ALD technique.

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Section: Principle and Advantages Of Ald Techniquementioning

confidence: 99%

“…According to the review by Niemela et al, [ 19 ] ALD TiO 2 has been widely used in the formation of hybrid inorganic–organic structures with innovative functions. Several reports elaborate on this application in PP film functionalization.…”

Section: Generic Ald Application In Pp Film Engineeringmentioning

confidence: 99%

Atomic Layer Deposition for Polypropylene Film Engineering—A Review

Song

2020

Macro Materials & Eng

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“…Another topic of debate has been the longevity of the p-type doping, although the p-type behavior of P:ZnO films was confirmed to remain stable for three months. [184] Very recently TiO2 -a well-known intrinsically n-type TCO material due to oxygen vacancies and/or titanium interstitials [241,242] -was fabricated as p-type films by ALD both without external doping and with nitrogen doping. [115,116] However, the origin of the uncommon p-type conductivity in the two cases seemed not to be the same.…”

Section: Electronic Transport and Optical Properties Of The Filmsmentioning

confidence: 99%

Atomic Layer Deposition of p‐Type Semiconducting Thin Films: a Review

Tripathi

Karppinen

2017

Adv Materials Inter

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Semiconductors such as elemental silicon allowing both p-type and n-type doping are the backbone of current microelectronics industry, while the continuous progress in the fabrication techniques has been the key for the ever-increased integration density and device miniaturization. Similarly, in the strongly emerging field of transparent electronics both p-type and n-type compound semiconductors are needed that moreover should be transparent within the entire visible spectral range. Atomic layer deposition (ALD) has been the thin-film deposition method of choice for a number of challenging applications in microelectronics, and it would be highly relevant technology for the transparent electronics as well. Currently the appropriate p-type semiconducting compounds are far outnumbered by the n-type compounds. Hence there is an obvious quest for high-quality thin films of new p-type compound semiconductors. This is clearly seen in the increasing number of annually published ALD papers on p-type semiconducting materials. In this overview our intension is to briefly present the current state of research in the field by (i) summarizing the ALD processes so far developed for the various p-type (transparent) conducting material candidates, and (ii) highlighting the most prominent electrical transport and optical properties achieved for these thin films.

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“…Though TiO 2 is possibly best known for its photocatalytic properties, it is also an interesting material for dielectric and transparent-conductor applications. Owing to its higher dielectric constant, rutile is the structure-of-choice for dielectric applications, while the higher electron mobility of anatase makes it more attractive to transparent-conductor applications [1]. Amorphous TiO 2 thin films are studied increasingly for subwavelength optical structures due to their high index of refraction and transparency within a broad wavelength region [2].…”

Section: Introduction mentioning

confidence: 99%

“…Amorphous TiO 2 thin films are studied increasingly for subwavelength optical structures due to their high index of refraction and transparency within a broad wavelength region [2]. TiO 2 tends to have n-type conducting character due to intrinsic defects that easily form in its crystal lattice [1]. There are many studies on TiO 2 in the fields of diluted magnetic semiconductors, photocatalyst materials, and electrode materials for electrochromic devices [3].…”

Section: Introduction mentioning

confidence: 99%

Determination and Improvement of Deposition Parameters of TiO2 Thin Films via ALD

Bozkaya¹,

Kupa²,

Gonullu³

et al. 2019

JMSE-B

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In recent years, with the development of technology, interest in microelectronics and thin film devices has increased considerably. Future improvements in microelectronics and thin film devices are dependent on the progress of novel materials and new deposition processes. In particular, the continuing drive to some devices such as silicon devices will soon require SiO 2 gate and oxide layers with a thickness on the order of a few nanometers as 1 or 2 nm. Titanium dioxide is a candidate material in microelectronic and thin film devices, a wide band gap semiconductor that exhibits various crystal structures. Similarly, thin film techniques like ALD (atomic layer deposition) attract attention for the preparation of these candidate materials with higher film uniformity and conformity. Present study demonstrates how TiO 2 thin films were growth by ALD technique on silicon substrates at 100 °C, 150 °C and 200 °C temperatures. Different deposition conditions were examined to determine to increase film quality and efficient production of set up. XPS (X-ray photoelectron spectroscopy) technique was used to obtain the surface composition of the TiO 2 films. Film thicknesses and crystal structures of the films were investigated by ellipsometry and XRD (X-ray diffraction) methods. Electrical properties of the films were measured by using four probe techniques, as well. Obtained results were evaluated in terms of repeatability of recipes and application potential.

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Titanium dioxide thin films by atomic layer deposition: a review

Cited by 128 publications

References 821 publications

Atomic Layer Deposition for Polypropylene Film Engineering—A Review

Atomic Layer Deposition for Polypropylene Film Engineering—A Review

Atomic Layer Deposition of p‐Type Semiconducting Thin Films: a Review

Determination and Improvement of Deposition Parameters of TiO2 Thin Films via ALD

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