Impact of HfTaO Buffer Layer on Data Retention Characteristics of Ferroelectric-Gate FET for Nonvolatile Memory Applications

Tang, Minghua; Xu, X. B.; Yang, Zhi; Sugiyama, Yoshihiro; Ishiwara, Hiroshi

doi:10.1109/ted.2010.2090883

Cited by 28 publications

(14 citation statements)

References 21 publications

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“…Recently, the HfO 2 (ε r ~ 20) buffer layers were demonstrated in the MFIS structured FeFET. Ishiwara reported that the Hf based oxides, such as HfO 2 and HfTaO buffer layer can improve the retention time up to several days 49 50 . In addition, other groups attempt to use relatively low dielectric constant ferroelectric thin-films, such as SrBi 2 Ta 2 O 9 (ε r ~ 50) 51 and polyvinlylidenefluoride (PVDF) polymer (ε r ~ 8.4) 52 .…”

Section: Resultsmentioning

confidence: 99%

“…Most of the extensive researches of FeFET are focused on the finding a suitable high- k insulator for buffer layers without improving the quality of ferroelectric thin-film in order to achieve a long retention and good endurance characteristics 50 57 58 59 60 . In addition, some of the researchers have successfully achieved a high quality ferroelectric thin-film by using atomic-layer deposition; however its high cost and low poor reproducibility cannot be a solution in the mass-product industry 61 .…”

Section: Resultsmentioning

confidence: 99%

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Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

Park

Kim

Jang

et al. 2016

Sci Rep

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The development of ferroelectric random-access memory (FeRAM) technology with control of grain boundaries would result in a breakthrough for new nonvolatile memory devices. The excellent piezoelectric and electrical properties of bulk ferroelectrics are degraded when the ferroelectric is processed into thin films because the grain boundaries then form randomly. Controlling the nature of nucleation and growth are the keys to achieving a good crystalline thin-film. However, the sought after high-quality ferroelectric thin-film has so far been thought to be impossible to make, and research has been restricted to atomic-layer deposition which is extremely expensive and has poor reproducibility. Here we demonstrate a novel epitaxial-like growth technique to achieve extremely uniform and large rectangular-shaped grains in thin-film ferroelectrics by dividing the nucleation and growth phases. With this technique, it is possible to achieve 100-μm large uniform grains, even made available on Si, which is large enough to fabricate a field-effect transistor in each grain. The electrical and reliability test results, including endurance and retention test results, were superior to other FeRAMs reported so far and thus the results presented here constitute the first step toward the development of FeRAM using epitaxial-like ferroelectric thin-films.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

Park

Kim

Jang

et al. 2016

Sci Rep

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“…1(a), which is reported to have a good data retention characteristic and a large memory window. 18 In this paper, p-type channel MFIS FeFETs with a 300 nm thick SBT ferroelectric film and a 10 nm thick HfTaO layer on silicon substrate were fabricated and characterized first before radiation. Then, the FeFETs were radiated by 60 Co gammas to different dose levels.…”

Section: Resultsmentioning

confidence: 99%

Impact of total ionizing dose irradiation on electrical property of ferroelectric-gate field-effect transistor

Yan

Xiong

Tang

et al. 2014

Journal of Applied Physics

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Articles you may be interested inInfluence of Ti substitution on the electrical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for nonvolatile memory applications The electrical and switching properties of a metal-ferroelectric ( Bi 3.15 Nd 0.85 Ti 3 O 12 ) -insulator ( Y 2 O 3stabilized ZrO 2 )-silicon diode Appl. Phys. Lett. 97, 103501 (2010); 10.1063/1.3486464Characterization of Pt / Bi 3.15 Nd 0.85 Ti 3 O 12 / HfO 2 / Si structure using a hafnium oxide as buffer layer for ferroelectric-gate field effect transistors P-type channel metal-ferroelectric-insulator-silicon field-effect transistors (FETs) with a 300 nm thick SrBi 2 Ta 2 O 9 ferroelectric film and a 10 nm thick HfTaO layer on silicon substrate were fabricated and characterized. The prepared FeFETs were then subjected to 60 Co gamma irradiation in steps of three dose levels. Irradiation-induced degradation on electrical characteristics of the fabricated FeFETs was observed after 1 week annealing at room temperature. The possible irradiation-induced degradation mechanisms were discussed and simulated. All the irradiation experiment results indicated that the stability and reliability of the fabricated FeFETs for nonvolatile memory applications will become uncontrollable under strong irradiation dose and/or long irradiation time. V C 2014 AIP Publishing LLC. [http://dx.

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“…To reduce the leakage current and charge tapping, a thick buffer layer at the interface, comprising SiO 2 , Al 2 O 3 , or HfO 2 , is employed for thin-film-based FeFET memory. However, adding the buffer layer causes other problems: the data retention period becomes shorter, and thus, higher gate voltages are required owing to the effect of the depolarization field [ 1 – 4 ]. In our memory devices, P(VDF-TrFE) was used as a ferroelectric gate.…”

Section: Resultsmentioning

confidence: 99%

“…Ferroelectric memory devices constructed using Si as a semiconducting channel generally experience difficulties in practical applications due to problems of interface diffusion and the formation of natural silicon oxide at the interface. Therefore, to obtain a good interface between ferroelectric oxide materials such as lead zirconate titanate (PZT) or bismuth titanium oxide (BTO) on Si semiconducting channels, a buffer layer between them is necessary, which can increase the depolarization field and working voltage [ 1 , 4 ]. Organic ferroelectric materials for nonvolatile memory devices have been exploited by many research groups because of their easy fabrication, light weight, flexibility, solution-based large area application, and low-cost fabrication.…”

Section: Introductionmentioning

confidence: 99%

Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels

et al. 2014

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A facile approach was demonstrated for fabricating high-performance nonvolatile memory devices based on ferroelectric-gate field effect transistors using a p-type Si nanowire coated with omega-shaped gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)). We overcame the interfacial layer problem by incorporating P(VDF-TrFE) as a ferroelectric gate using a low-temperature fabrication process. Our memory devices exhibited excellent memory characteristics with a low programming voltage of ±5 V, a large modulation in channel conductance between ON and OFF states exceeding 105, a long retention time greater than 3 × 104 s, and a high endurance of over 105 programming cycles while maintaining an ION/IOFF ratio higher than 102.

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Impact of HfTaO Buffer Layer on Data Retention Characteristics of Ferroelectric-Gate FET for Nonvolatile Memory Applications

Cited by 28 publications

References 21 publications

Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

Impact of total ionizing dose irradiation on electrical property of ferroelectric-gate field-effect transistor

Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels

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