Impact of total ionizing dose irradiation on electrical property of ferroelectric-gate field-effect transistor

Abstract

Articles you may be interested inInfluence of Ti substitution on the electrical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for nonvolatile memory applications The electrical and switching properties of a metal-ferroelectric ( Bi 3.15 Nd 0.85 Ti 3 O 12 ) -insulator ( Y 2 O 3stabilized ZrO 2 )-silicon diode Appl. Phys. Lett. 97, 103501 (2010); 10.1063/1.3486464Characterization of Pt / Bi 3.15 Nd 0.85 Ti 3 O 12 / HfO 2 / Si structure using a hafnium oxide as buffer layer for ferroelectric-gate field effect transistors P-type channel metal-ferroelectric-insulator-silicon field-effect transistors (FETs) with a 300 nm thick SrBi 2 Ta 2 O 9 ferroelectric film and a 10 nm thick HfTaO layer on silicon substrate were fabricated and characterized. The prepared FeFETs were then subjected to 60 Co gamma irradiation in steps of three dose levels. Irradiation-induced degradation on electrical characteristics of the fabricated FeFETs was observed after 1 week annealing at room temperature. The possible irradiation-induced degradation mechanisms were discussed and simulated. All the irradiation experiment results indicated that the stability and reliability of the fabricated FeFETs for nonvolatile memory applications will become uncontrollable under strong irradiation dose and/or long irradiation time. V C 2014 AIP Publishing LLC. [http://dx.

Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO2-Based Ferroelectric Field-Effect Transistors

“…It can be concluded that the two polarization states of HZO ferroelectric thin films have excellent tolerance of total dose radiation. Considering the dependence of radiation-induced charge trapping on the oxide thickness, the excellent scalability of HfO 2 -based thin films would help suppress the buildup of radiation-induced oxide-trapped charges. − The buildup of a large amount of oxide-trapped charges in the gate stack may cause severe Δ V ot and Δ V it in the FeFETs, resulting in poor stability of memory states under radiation. − Indeed, previous studies have shown that HfO 2 -based ferroelectric thin films exhibit robust ferroelectric performance against TID radiation, while the remanent polarization of thicker perovskite ferroelectric films was reported to be degraded by the TID radiation. − Thus, the HZO-based FeFETs show stable memory states under radiation, demonstrating their great potential for radiation-hard nonvolatile memory applications.…”

“…25−28 voltage (V TH ) shift and memory window (MW) degradation. 25,28 In 2019, Chen et al first reported the TID effect on memory characteristics of Hf 0.5 Zr 0.5 O 2 (HZO)-based FeFETs. 29 They found that the MW of HZO-based FeFETs did not degrade for the dose to 1 Mrad(Si), but the program/erase (P/ E) cycling properties (i.e., endurance properties) showed nonnegligible degradation owing to the radiation.…”

“…As a result, ferroelectric memory technologies have attracted great interest due to the reported radiation tolerance of ferroelectric materials. Due to the aforementioned challenges in FeFETs integrated with traditional ferroelectric materials, previous research mainly focused on the radiation effects on ferroelectric thin films. − Only a few works have been devoted to studying the impact of radiation on FeFET device characteristics. − Yan et al investigated the TID effects in FeFETs integrated with SrBi 2 Ta 2 O 9 thin films and found that the TID radiation would cause severe threshold voltage ( V TH ) shift and memory window (MW) degradation. , In 2019, Chen et al first reported the TID effect on memory characteristics of Hf 0.5 Zr 0.5 O 2 (HZO)-based FeFETs . They found that the MW of HZO-based FeFETs did not degrade for the dose to 1 Mrad­(Si), but the program/erase (P/E) cycling properties (i.e., endurance properties) showed non-negligible degradation owing to the radiation.…”

Ferroelectric Properties of Multilayer Thin Films of Barium Strontium Titanate and Layered Bismuth Titanate for Use in Nonvolatile Ferroelectric Memory

“…Например, полевой транзистор [1], где в качестве подзатворного диэлектрика используется сегнето-электрический слой, который является основой долговременной энергонезависимой памяти с про-извольным доступом, высокой скорости и плотно-сти записи данных при незначительной потребляе-мой мощности. Однако в настоящее время ни одна из исследуемых сегнетоэлектрических ячеек памя-ти не позволяет хранить информацию дольше, чем несколько дней, что далеко от требуемого разра-ботчиками вычислительной техники десятилетнего энергонезависимого хранения информации [2].…”

A versatile and compact high-intensity electron beam for multi-kGy irradiation in nano- or micro-electronic devices

“…The development of resistant materials in harsh radiation environments is of prime importance for the reliability of systems in aerospace, nuclear and military industries 1 . Hardening studies of micro and nanoscale electronic circuits are currently performed under irradiation doses ranging from 1 Gy to a few tens of kGy [2][3][4][5][6][7][8][9][10][11] . Strong alterations of performances are observed for doses larger than 1 kGy.…”