Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels

Ngoc, Huynh Van; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

doi:10.1007/s40820-014-0016-2

Cited by 21 publications

(8 citation statements)

References 21 publications

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Section: Properties and Applicationsmentioning

confidence: 99%

“…A new nonvolatile memory device based on FeFETs was recently fabricated using a p‐type Si NW coated with omega‐shaped gate organic ferroelectric PVDF‐TrFE . Excitingly, this memory device exhibited excellent memory characteristics, a low programming voltage level of ±5 V, a high channel conductance modulation between the ON and OFF states exceeding 10 5 , long retention times exceeding 3 × 10 4 s, and high endurance over 10 5 programming cycles while maintaining an I ON / I OFF ratio higher than 10 2 (Figure d–f).…”

Section: Properties and Applicationsmentioning

confidence: 99%

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One‐Dimensional Ferroelectric Nanostructures: Synthesis, Properties, and Applications

et al. 2016

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One‐dimensional (1D) ferroelectric nanostructures, such as nanowires, nanorods, nanotubes, nanobelts, and nanofibers, have been studied with increasing intensity in recent years. Because of their excellent ferroelectric, ferroelastic, pyroelectric, piezoelectric, inverse piezoelectric, ferroelectric‐photovoltaic (FE‐PV), and other unique physical properties, 1D ferroelectric nanostructures have been widely used in energy‐harvesting devices, nonvolatile random access memory applications, nanoelectromechanical systems, advanced sensors, FE‐PV devices, and photocatalysis mechanisms. This review summarizes the current state of 1D ferroelectric nanostructures and provides an overview of the synthesis methods, properties, and practical applications of 1D nanostructures. Finally, the prospects for future investigations are outlined.

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Section: Properties and Applicationsmentioning

confidence: 99%

Section: Properties and Applicationsmentioning

confidence: 99%

One‐Dimensional Ferroelectric Nanostructures: Synthesis, Properties, and Applications

et al. 2016

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“… A comparison between single SiNW-FETs [ 11 , 33 , 175 , 181 , 182 , 183 , 184 , 185 , 186 , 187 , 188 , 189 , 190 ] and SiNN-FETs with respect to the channel length (SiNN density is about 0.6 NWs μm −2 ). Squares of SiNN-FETs segment show the average of several devices’ performances in which bars are representative of deviation in measured parameters for a certain L c .…”

Section: Figurementioning

confidence: 99%

Functional Devices from Bottom-Up Silicon Nanowires: A Review

et al. 2022

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This paper summarizes some of the essential aspects for the fabrication of functional devices from bottom-up silicon nanowires. In a first part, the different ways of exploiting nanowires in functional devices, from single nanowires to large assemblies of nanowires such as nanonets (two-dimensional arrays of randomly oriented nanowires), are briefly reviewed. Subsequently, the main properties of nanowires are discussed followed by those of nanonets that benefit from the large numbers of nanowires involved. After describing the main techniques used for the growth of nanowires, in the context of functional device fabrication, the different techniques used for nanowire manipulation are largely presented as they constitute one of the first fundamental steps that allows the nanowire positioning necessary to start the integration process. The advantages and disadvantages of each of these manipulation techniques are discussed. Then, the main families of nanowire-based transistors are presented; their most common integration routes and the electrical performance of the resulting devices are also presented and compared in order to highlight the relevance of these different geometries. Because they can be bottlenecks, the key technological elements necessary for the integration of silicon nanowires are detailed: the sintering technique, the importance of surface and interface engineering, and the key role of silicidation for good device performance. Finally the main application areas for these silicon nanowire devices are reviewed.

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“…P s of CA crystals can even achieve 30 µC cm −2 . [ 11 ] These attributes are very promising for low‐power electronics including nonvolatile memories, [ 10e,12 ] yet the highly crystalline large‐area continuous thin film/device fabrication of CA [ 13 ] and DIPAB [ 14 ] is a challenging task. Obtaining the ferroelectric properties of polycrystalline films prepared by conventional techniques such as thermal evaporation [ 15 ] is a difficult task, since their randomly distributed polar axes in the unipolar crystallites can significantly suppress remnant polarization ( P r ) with large depolarization fields, which may lead to the failure of ferroelectric switching.…”

Section: Figurementioning

confidence: 99%

Wafer‐Scale Diisopropylammonium Bromide Films for Low‐Power Lateral Organic Ferroelectric Capacitors

Jin

Zhou

et al. 2020

Adv Elect Materials

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Organic ferroelectrics, particularly the polymer polyvinylidene fluoride and its copolymer polyvinylidene fluoride‐trifluoroethylene, have received much attention owing to their low cost, flexibility, and convenient thin film fabrication. However, development of this outstanding material for electronic applications is significantly impeded by its attributes of large coercive electric fields and poor spontaneous polarization. While the recent breakthroughs reveal that several kinds of molecular ferroelectrics (e.g., diisopropylammonium bromide (DIPAB)) can exhibit excellent properties comparable to inorganic ferroelectrics, it is still difficult to obtain high‐quality continuous thin films for ferroelectric devices with high performance. In this work, a simple solution strategy is used for the preparation of large‐area high crystallinity or even single‐crystal DIPAB films. Subsequently, planar ferroelectric capacitors are developed with large in‐plane ferroelectric polarization. These capacitors possess excellent memory function with small operating voltages (1–3 V), and a record remnant polarization of 13 µC cm−2 for organic ferroelectric devices. The findings have the potential to pave the way for the substitution of conventional ferroelectric polymers with DIPAB films for future organic ferroelectric devices.

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Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels

Cited by 21 publications

References 21 publications

One‐Dimensional Ferroelectric Nanostructures: Synthesis, Properties, and Applications

One‐Dimensional Ferroelectric Nanostructures: Synthesis, Properties, and Applications

Functional Devices from Bottom-Up Silicon Nanowires: A Review

Wafer‐Scale Diisopropylammonium Bromide Films for Low‐Power Lateral Organic Ferroelectric Capacitors

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