2016
DOI: 10.1063/1.4962641
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High-speed polysilicon CMOS photodetector for telecom and datacom

Abstract: Absorption by mid-bandgap states in polysilicon or heavily implanted silicon has been previously utilized to implement guided-wave infrared photodetectors in CMOS compatible photonic platforms. Here, we demonstrate a resonant guided-wave photodetector based on the polysilicon layer that is used for the transistor gate in a microelectronic SOI CMOS process without any change to the foundry process flow (“zero-change” CMOS). Through a combination of doping mask layers, a lateral pn junction diode in the polysili… Show more

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Cited by 17 publications
(9 citation statements)
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“…We address this issue by locally adding a thicker silicon oxide photonic isolation layer ( 1.5 µm) with a fabrication process very similar to STI. An optimized polysilicon film (220 nm thick) with low optical propagation loss and high carrier mobility is then deposited on this layer, and is used for passive photonic components, free-carrier plasma dispersion modulators 24, , and photodetectors that utilize the absorption by defect states at polysilicon grain boundaries 26,27 .…”
mentioning
confidence: 99%
“…We address this issue by locally adding a thicker silicon oxide photonic isolation layer ( 1.5 µm) with a fabrication process very similar to STI. An optimized polysilicon film (220 nm thick) with low optical propagation loss and high carrier mobility is then deposited on this layer, and is used for passive photonic components, free-carrier plasma dispersion modulators 24, , and photodetectors that utilize the absorption by defect states at polysilicon grain boundaries 26,27 .…”
mentioning
confidence: 99%
“…The loaded Q-factor of 13 k of these modulators shows that the sub-100 nm thickness of the silicon device layer is not a limiting factor of these platforms (32 nm and 45 nm PD-SOI nodes) to implement compact and high performance devices for wavelengths longer than the O-band (most silicon photonic platforms have a silicon thickness of 200-250 nm). Also, in addition to the SiGe PDs, defect-based resonant PDs have been demonstrated covering the optical telecommunication O to L bands [35]. These PDs work based on the absorption enabled by the defect states in the transistor gate polysilicon layer [36].…”
Section: Active Devicesmentioning
confidence: 99%
“…Today, these include epitaxial Ge photodetectors [52], wafer-bonded InP [53], or Si with mid-band-gap states [54]. Graphene has recently emerged as a promising alternative that promises simple layer-transfer integration and photo response from ultraviolet (UV) all the way to the near-infrared, mid-infrared, and terahertz (THz) regimes.…”
Section: Graphene-waveguide High-responsivity Photodetectormentioning
confidence: 99%