Perfect graphene is believed to be the strongest material. However, the useful strength of large-area graphene with engineering relevance is usually determined by its fracture toughness, rather than the intrinsic strength that governs a uniform breaking of atomic bonds in perfect graphene. To date, the fracture toughness of graphene has not been measured. Here we report an in situ tensile testing of suspended graphene using a nanomechanical device in a scanning electron microscope. During tensile loading, the pre-cracked graphene sample fractures in a brittle manner with sharp edges, at a breaking stress substantially lower than the intrinsic strength of graphene. Our combined experiment and modelling verify the applicability of the classic Griffith theory of brittle fracture to graphene. The fracture toughness of graphene is measured as the critical stress intensity factor of 4:0 AE 0:6 MPa ffiffiffiffi m p and the equivalent critical strain energy release rate of 15.9 J m À 2 . Our work quantifies the essential fracture properties of graphene and provides mechanistic insights into the mechanical failure of graphene.

Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

The ability to confine light into tiny spatial dimensions is important for applications such as microscopy, sensing, and nanoscale lasers. Although plasmons offer an appealing avenue to confine light, Landau damping in metals imposes a trade-off between optical field confinement and losses. We show that a graphene-insulator-metal heterostructure can overcome that trade-off, and demonstrate plasmon confinement down to the ultimate limit of the length scale of one atom. This is achieved through far-field excitation of plasmon modes squeezed into an atomically thin hexagonal boron nitride dielectric spacer between graphene and metal rods. A theoretical model that takes into account the nonlocal optical response of both graphene and metal is used to describe the results. These ultraconfined plasmonic modes, addressed with far-field light excitation, enable a route to new regimes of ultrastrong light-matter interactions.

Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra-and inter-chip communications [1][2][3][4]. Silicon-based EO modulators show sufficient figures of merits regarding device footprint, speed, power consumption and modulation depth [5][6][7][8][9][10][11]. However, the weak electrooptic effect of silicon still sets a technical bottleneck for these devices, motivating the development of modulators based on new materials. Graphene, a two-dimensional carbon allotrope, has emerged as an alternative active material for optoelectronic applications owing to its exceptional optical and electronic properties [12][13][14]. Here, we demonstrate a high-speed graphene electro-optic modulator based on a graphene-boron nitride (BN) heterostructure integrated with a silicon photonic crystal nanocavity. Strongly enhanced light-matter interaction of graphene in a submicron cavity enables efficient electrical tuning of the cavity reflection. We observe a modulation depth of 3.2 dB and a cut-off frequency of 1.2 GHz.

The ability to control excitons in semiconductors underlies numerous proposed applications, from excitonic circuits for computing and communications 1,2 to polariton condensates 3 to energy transport in photovoltaics 4 . 2D semiconductors are particularly promising for room-temperature applications due to their large exciton binding energy 5,6 . Their enormous stretchability gives rise to a strain-engineerable bandgap that has been used to induce static exciton flux in predetermined structures 7-10 . However, dynamic control of exciton flux represents an outstanding challenge. Here, we introduce a method to tune the bandgap of suspended 2D semiconductors by applying a local strain gradient with a nanoscale tip. This strain allows us to locally and reversibly shift the exciton energy and to steer the exciton flux over micron-scale distances, as observed by wide-field imaging and time-resolved photoluminescence spectroscopy. We anticipate that the ability to strongly and dynamically modulate the bandgap of a semiconductor at the nanoscale not only marks an important experimental tool but will also open a broad range of new applications from information processing to energy conversion.

Traditional single-fiber pull-out type experiments were conducted on individual multiwalled carbon nanotubes (MWNT) embedded in an epoxy matrix using a novel technique. Remarkably, the results are qualitatively consistent with the predictions of continuum fracture mechanics models. Unstable interface crack propagation occurred at short MWNT embedments, which essentially exhibited a linear load-displacement response prior to peak load. Deep embedments, however, enabled stable crack extension and produced a nonlinear load-displacement response prior to peak load. The maximum pull-out forces corresponding to a wide range of embedments were used to compute the nominal interfacial shear strength and the interfacial fracture energy of the pristine MWNT-epoxy interface.

High sensitivity, fast response time and strong light absorption are the most important metrics for infrared sensing and imaging. The trade-off between these characteristics remains the primary challenge in bolometry. Graphene with its unique combination of a record small electronic heat capacity and a weak electron-phonon coupling has emerged as a sensitive bolometric medium that allows for high intrinsic bandwidths. Moreover, the material's light absorption can be enhanced to near unity by integration into photonic structures. Here, we introduce an integrated hot-electron bolometer based on Johnson noise readout of electrons in ultra-clean hexagonal-boron-nitride-encapsulated graphene, which is critically coupled to incident radiation through a photonic nanocavity with Q = 900. The device operates at telecom wavelengths and shows an enhanced bolometric response at charge neutrality. At 5 K, we obtain a noise equivalent power of about 10 pW Hz, a record fast thermal relaxation time, <35 ps, and an improved light absorption. However the device can operate even above 300 K with reduced sensitivity. We work out the performance mechanisms and limits of the graphene bolometer and give important insights towards the potential development of practical applications.

We report on the development and application of a silicon microdevice for the in situ quantitative mechanical characterization of single 1-D nanomaterials within a scanning electron microscope equipped with a quantitative nanoindenter. The design makes it possible to convert a compressive nanoindentation force applied to a shuttle to uniaxial tension on a specimen attached to a sample stage. Finite-element analysis and experimental calibration have been employed to extract the specimen stress versus strain curve from the indentation load versus displacement curve. The stress versus strain curves for three 200-300-nm-diameter Ni nanowire specimens are presented and analyzed.[2009-0271]