Growth of Thick AlN Layer by Hydride Vapor Phase Epitaxy

Liu, Yuhuai; Tanabe, Tomoaki; Miyake, Hideto; Hiramatsu, Kazumasa; Shibata, Tomohiko; Tanaka, Mutsuhiro; Masa, Y.

doi:10.1143/jjap.44.l505

Cited by 41 publications

(34 citation statements)

References 11 publications

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“…HVPE has produced thick AlN films with growth rate as fast as 200 µm/h. This is the fastest HVPE growth rate hitherto reported for AlN with qualities comparable to what has been reported by other groups [4][5][6]. However, the layers grown by MEMOCVD exhibit the best qualities ever reported.…”

Section: Discussionsupporting

confidence: 84%

“…Various groups have reported AlN growth by bulk and seeded methods [1,2], but large-area AlN substrates are not available yet. HVPE appears to be an attractive technique to fabricate AlN substrates as reported by a few groups [3,4,5]. HVPE is being successfully utilized to grow free-standing GaN substrates with growth rates as high as 200 µm/h [6].…”

Section: Introductionmentioning

confidence: 99%

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Growth of AlN films and their characterization

Jain¹,

Gao²,

Zhang³

et al. 2006

Phys. Status Solidi (c)

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Single crystal AlN layers have been produced by migration enhanced metal organic chemical vapor deposition (MEMOCVD), hydride vapor phase epitaxy (HVPE) and their combination. The growth was carried out on 2" basal plane sapphire substrates. In MEMOCVD, the duration and waveforms of precursors were varied to achieve better surface mobility and thus better atomic incorporation. It resulted in superior layer quality templates with the narrowest (002) X-ray rocking curve full width half maximum (FWHM). Such high quality AlN templates were used as seeds for subsequent HVPE growth. Thick films with thickness ranging from 1-25 µm have been grown by HVPE with growth rates as high as 200 µm/min, highest ever reported. Films grown by the two methods have been extensively characterized by Nomarski microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), high-resolution Xray diffractometry (HRXRD), and photoluminescence (PL).

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Section: Discussionsupporting

confidence: 84%

Section: Introductionmentioning

confidence: 99%

Growth of AlN films and their characterization

Jain¹,

Gao²,

Zhang³

et al. 2006

Phys. Status Solidi (c)

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“…However, the present authors recently reported that HVPE of AlN using AlCl 3 , which does not react with quartz, is possible by preferential generation of AlCl 3 at the source zone [7,8]. Exploiting this fact, other research groups have also investigated HVPE of AlN [9,10]. However, little has been revealed about the effects of growth conditions on AlN growth.…”

Section: Introductionmentioning

confidence: 88%

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃

Kumagai¹,

Takemoto²,

Kikuchi³

et al. 2006

Physica Status Solidi (b)

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A thermodynamic analysis on hydride vapor phase epitaxy (HVPE) of AlN using AlCl 3 and NH 3 was performed. Regardless of the carrier gas used, partial pressures of Al-containing gaseous species [AlCl 3 , AlCl 2 , AlCl and (AlCl 3 ) 2 ] in equilibrium with AlN are significantly low in the temperature range of 500 -1500 °C when the input V/III ratio is above 1. This means that the driving force for AlN growth (∆P Al ) becomes almost equal to the input partial pressure of AlCl 3 , which is quite different from HVPE of GaN. The good agreement between the calculated and experimental growth rates shows that HVPE of AlN is thermodynamically controlled.

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“…However, numbers of literatures of HVPE growth of AlN are limited [6][7][8][9][10][11][12] because the AlCl generated in the source zone reacts with quartz glass reactor. Recently, our group has reported HVPE of AlN using AlCl 3 as an aluminum source on the basis of thermodynamic analysis results [6,8,10].…”

mentioning

confidence: 99%

Growth of thin protective AlN layers on sapphire substrates at 1065 °C for hydride vapor phase epitaxy of AlN above 1300 °C

Tajima

Kubota

Togashi

et al. 2008

Phys. Status Solidi (c)

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A thin protective AlN layer was grown on a (0001) sapphire substrate at 1065 °C for main AlN layer growth at high temperature (> 1300 °C) by hydride vapor phase epitaxy (HVPE). The formation of surface pits on the surface of the epitaxial AlN layer, grown directly on the sapphire substrate at 1320 °C, could be prevented by growing the protective layer. The full‐width at half‐maximum (FWHM) of X‐ray diffraction (XRD) rocking curves of asymmetric (10 $\bar 1$ 0) and symmetric (0002) AlN decreased to 19.8 and 9.6 min, respectively. The concentration of oxygen impurities in the layer grown at 1320 °C was also reduced from 3 × 1019 to 4 × 1018 cm−3 by protecting sapphire substrate at 1065 °C. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Growth of Thick AlN Layer by Hydride Vapor Phase Epitaxy

Cited by 41 publications

References 11 publications

Growth of AlN films and their characterization

Growth of AlN films and their characterization

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃

Growth of thin protective AlN layers on sapphire substrates at 1065 °C for hydride vapor phase epitaxy of AlN above 1300 °C

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Growth of Thick AlN Layer by Hydride Vapor Phase Epitaxy

Cited by 41 publications

References 11 publications

Growth of AlN films and their characterization

Growth of AlN films and their characterization

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl3 and NH3

Growth of thin protective AlN layers on sapphire substrates at 1065 °C for hydride vapor phase epitaxy of AlN above 1300 °C

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Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃