Single crystal AlN provides a native substrate for Al-rich AlGaN that is needed for the development of efficient deep ultraviolet light emitting and laser diodes. An absorption band centered around 4.7 eV (∼265 nm) with an absorption coefficient above 1000 cm−1 is observed in these substrates. Based on density functional theory calculations, substitutional carbon on the nitrogen site introduces absorption at this energy. A series of single crystalline wafers were used to demonstrate that this absorption band linearly increased with carbon, strongly supporting the model that CN- is the predominant state for carbon in AlN.

A candidate resonant tetraneutron state is found in the missing-mass spectrum obtained in the double-charge-exchange reaction ^{4}He(^{8}He,^{8}Be) at 186  MeV/u. The energy of the state is 0.83±0.65(stat)±1.25(syst)  MeV above the threshold of four-neutron decay with a significance level of 4.9σ. Utilizing the large positive Q value of the (^{8}He,^{8}Be) reaction, an almost recoilless condition of the four-neutron system was achieved so as to obtain a weakly interacting four-neutron system efficiently.

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The structural and optical quality of a freestanding AlN substrate prepared from a thick AlN layer grown by hydride vapor phase epitaxy (HVPE) on a bulk (0001)AlN substrate prepared by physical vapor transport (PVT) were investigated. The prepared HVPE-AlN substrate was crack- and stress-free. High-resolution X-ray diffraction ω-rocking curves of symmetric (0002) and skew-symmetric (1011) reflections had small full widths at half maximum (FWHMs) of 31 and 32 arcsec, respectively. Deep-ultraviolet optical transparency of the HVPE-AlN substrate was higher than that of the PVT-AlN substrate, which was related to lower concentrations of C, O impurities, and Al vacancy.

Characterisation of the few doubly magic nuclei, known and predicted, provides a benchmark for our knowledge of the fundamental forces that drive the evolution of shell closures with proton-to-neutron asymme