Aims
To explore the association between cognitive emotion regulation strategies and anxiety and depression among nurses during the COVID‐19 outbreak.
Background
Nurses play a vital role in responding to the COVID‐19 outbreak, but many of them suffer from psychological problems due to the excessive workload and stress. Understanding the correlation between cognitive emotion regulation strategies and anxiety and depression will promote targeted psychosocial interventions for these affected nurses.
Methods
This cross‐sectional study of 586 nurses was conducted in Eastern China. Participants completed online questionnaires that investigated anxiety, depression and cognitive emotion regulation strategies.
Results
The prevalence of nurses' anxiety and depression was 27.6% and 32.8%, respectively. Lower self‐blame, rumination and catastrophizing, as well as greater acceptance and positive refocusing, were related to fewer symptoms of anxiety or depression.
Conclusion
The cognitive emotion regulation strategies of acceptance and positive refocusing contribute to reducing anxiety or depression. These strategies should be considered when implementing psychotherapeutic interventions to improve nurses' adverse emotional symptoms.
Implications for Nursing Management
This study highlights the need to assess cognitive emotion regulation strategies use in screening for anxiety and depression. Nurse managers should develop psychosocial interventions including appropriate strategies to help nurses with adverse emotions during a pandemic.
Thin‐film transistors (TFTs) grown on a flexible glass substrate using single‐crystal‐like germanium (Ge) channel to simultaneously achieve high carrier mobility, high performance characteristics, mechanical flexibility, and cost‐effective large‐area manufacturing are reported. High‐crystalline‐quality materials of biaxially textured CeO2 deposited at room temperature by ion‐beam‐assisted deposition followed by single‐crystal‐like Ge epitaxially grown at 550 °C by plasma‐enhanced chemical vapor deposition on an amorphous substrate are developed. p‐type Ge with {111} surface shows well‐aligned grains in both out‐of‐plane and in‐plane directions, as characterized by reflection high‐energy electron diffraction, X‐ray diffraction, and Raman spectroscopy. The material structures are fabricated to transistor devices with top‐gate geometry. The devices (channel width and length = 80 and 14 μm) exhibit performance characteristics with on/off ratio of ≈106, a field‐effect mobility of ≈105 cm2 V−1 s−1, and saturation current levels of ≈3.5 mA, which are significantly higher than performance metrics of other state‐of‐the‐art TFTs based on amorphous Si, organic semiconductors, and semiconducting oxides. This development can open a new avenue for next‐generation TFTs beyond the display applications.
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High mobility n-type GaAs – mobilities greater than 1300 cm2 V−1 s−1, highest achieved among semiconductor films grown directly on Ge template on metal foils.
Single-crystal-like silicon (Si) thin films on bendable and scalable substrates via direct deposition are a promising material platform for high-performance and cost-effective devices of flexible electronics. However, due to the thick and unintentionally highly doped semiconductor layer, the operation of transistors has been hampered. We report the first demonstration of high-performance flexible thin-film transistors (TFTs) using single-crystal-like Si thin films with a field-effect mobility of ∼200 cm/V·s and saturation current, I/l > 50 μA/μm, which are orders-of-magnitude higher than the device characteristics of conventional flexible TFTs. The Si thin films with a (001) plane grown on a metal tape by a "seed and epitaxy" technique show nearly single-crystalline properties characterized by X-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction, and transmission electron microscopy. The realization of flexible and high-performance Si TFTs can establish a new pathway for extended applications of flexible electronics such as amplification and digital circuits, more than currently dominant display switches.
This study demonstrates the first flexible single‐junction III‐V photovoltaic solar cells (SCs) based on single‐crystal‐like gallium arsenide (GaAs) thin films on a low‐cost metal substrate by direct and continuous deposition, which can bypass expensive single crystal wafer fabrication. The two‐dimensional modeling of the GaAs SC is developed and used to study feasibility of single‐crystal‐like GaAs thin films for high performance SC devices. A promising SC device performance characteristic with an open‐circuit voltage of 560 mV and short circuit current of 19.4 mA/cm2, resulting in a conversion efficiency of ~7.6%, is demonstrated.
Molten KOH etchings were implemented to delineate structural defects in the n- and ptype 4H-SiC samples with different doping concentrations. It was observed that the etch preference is significantly influenced by both the doping concentrations and the conductivity types. The p-type Si-face 4H-SiC substrate has the most preferential etching property, while it is least for n+ samples. It has been clearly demonstrated that the molten KOH etching process involves both chemical and electrochemical processes, during which isotropic etching and preferential etching are competitive. The n+ 4H-SiC substrate was overcompensated via thermal diffusion of boron to p-type and followed by molten KOH etching. Three kinds of etch pits corresponding to threading screw, threading edge, and basal plane dislocations are distinguishably revealed. The same approach was also successfully employed in delineating structural defects in (0001) C-face SiC wafers.
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