Grain size effects on the optical characteristics of pulsed-laser deposited vanadium oxide thin films

Ramana, C. V.; Smith, Richard J.; Hussain, O. M.

doi:10.1002/pssa.200309009

Cited by 128 publications

(74 citation statements)

References 8 publications

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“…From the figure, it can be clearly seen that the films deposited at 60 • C show higher transmittance percentage than that of the films deposited at 50 and 70 • C. Variation in transmittance might be due to the variation in grain size of the films and the films with lower grain size show higher transmission percentage. 27 Further, with increasing optical path length, i.e., with increasing thickness, the optical scattering losses may also increase. That might also contribute to the decrement of transmittance in the case of films deposited at 70 • C compared to the films deposited at 60 • C. For BMZ thin films with decreasing grain size the fundamental absorption edge has been red shifted, 28 indicating the possibility of electronic transition at lower energy region.…”

Section: Resultsmentioning

confidence: 98%

Low power optical limiting studies on nanocrystalline benzimidazole thin films prepared by modified liquid phase growth technique

et al. 2015

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In the present work, benzimidazole (BMZ), a well known nonlinear optical material, thin films were deposited using the modified liquid phase growth technique at different solution temperatures. The prepared samples were subjected to spectral, structural and surface analyses. Linear optical properties and third-order optical nonlinearity of the deposited BMZ thin films were analysed using UV-visible-NIR spectrum and Z-scan technique, respectively. The experimental results show that the BMZ films exhibit reverse saturable absorption and positive nonlinearity at 650 nm CW laser of power 5 mW. The measured third-order nonlinear susceptibility of the films is about 10 −10 esu. Optical limiting studies were performed using the same laser source and the potentiality of the BMZ films is reported.

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Section: Resultsmentioning

confidence: 98%

Low power optical limiting studies on nanocrystalline benzimidazole thin films prepared by modified liquid phase growth technique

et al. 2015

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“…40 The increase in band gap with decreasing thickness have been reported in several previous studies. 55,56 In general, E g values are very sensitive to: (i) grain size; 57,58 (ii) disorder at the grain boundaries; 59 (iii) lattice parameters-lattice strain; 60,61 (iv) chemical composition; 43 (v) thermal treatment; 41,62,63 (vi) quantum size effect and one-dimensional quantum confinement; 64 and (vii) carrier concentration. 60 In our case, the increase of E g with decrease of film thickness can be due to decrease in grain size observed from AFM images (see Fig.…”

Section: Optical Characterizationmentioning

confidence: 99%

“…In the present case, it increases with decrease in crystallite size and film thickness. 40,41,51,52,[55][56][57][58][59][60][61][62][63][64] The other possibility may be the presence of many very small crystallites in these films which may behave like an amorphous phase and may contribute to the absorption spectrum, resulting in higher band gap. 65 …”

Section: Optical Characterizationmentioning

confidence: 99%

Effect of thickness on dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr0.2Ti0.8)O3 thin films

Kumari

Ortega

Pradhan

et al. 2015

Journal of Applied Physics

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(PZTNi30) thin films for various thicknesses, ranging from 5 nm to 400 nm, were fabricated by pulsed laser deposition technique. Giant dielectric dispersion, low dielectric loss, large dielectric constant $1000-1500 from 100 Hz to 100 kHz, and diffused dielectric anomaly near 570-630 K were observed in PZTNi30 thin films. These films show well saturated ferroelectric hysteresis, with large remanent polarization. It also illustrated excellent optical transparency which decreased from 82 to 72% with increasing film thickness from 5 nm to 400 nm for the probe wavelengths ranging from 200 to 1100 nm. A decrease in direct bandgap (E g ) values from 4 eV to 3.4 eV and indirect-E g values from 3.5 eV to 2.9 eV were observed for PZTNi30 thin films with increase in film thickness from 5 nm to 400 nm, respectively. The direct and indirect bandgaps were discussed in context of film thickness and grain size effects. Our investigations on optical properties of PZTNi30 thin films suggest that bandgap can be modified as a function of film thickness which may be useful for readers working to develop novel candidates for ferroelectric photovoltaic. V C 2015 AIP Publishing LLC.

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“…This is attributed to both crystallinity and intrinsic defects that cause a shift in the absorption edge followed by the RTA treatment [17,34]. An increase in grain size leads to a decrease in the optical band gap energy due to the fewer free carrier concentrations and lower potential barriers originating from large particles with fewer grain boundaries and imperfections [35].…”

Section: Resultsmentioning

confidence: 99%

Se-loss-induced CIS Thin Films in RTA Process after Co-sputtering Using CuSe₂and InSe₂Targets

Kim¹,

Jun²,

Cho³

2014

Journal of Electrical Engineering and Technology

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-Chalcopyrite CuInSe 2 (CIS) thin films were prepared without Se-/ S-containing gas by co-sputtering using CuSe 2 and InSe 2 selenide-targets and rapid thermal annealing. The grain size increased to a maximum of 54.68 nm with a predominant (112) plane. The tetragonal distortion parameter η decreased and the inter-planar spacing d (112) increased in the RTA-treated CIS thin films annealed at a 400°C, which indicates better crystal quality. The increased carrier concentration of RTA-treated p-type CIS thin films led to a decrease in resistivity due to an increase in Cu composition at annealing temperatures ≥ 350°C. The optical band gap energy (E g ) of CIS thin films decreased to 1.127 eV in RTA-treated CIS thin films annealed at 400°C due to the improved crystallinity, elevated carrier concentration and decreased In composition.

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Grain size effects on the optical characteristics of pulsed-laser deposited vanadium oxide thin films

Cited by 128 publications

References 8 publications

Low power optical limiting studies on nanocrystalline benzimidazole thin films prepared by modified liquid phase growth technique

Low power optical limiting studies on nanocrystalline benzimidazole thin films prepared by modified liquid phase growth technique

Effect of thickness on dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr0.2Ti0.8)O3 thin films

Se-loss-induced CIS Thin Films in RTA Process after Co-sputtering Using CuSe₂and InSe₂Targets

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Grain size effects on the optical characteristics of pulsed-laser deposited vanadium oxide thin films

Cited by 128 publications

References 8 publications

Low power optical limiting studies on nanocrystalline benzimidazole thin films prepared by modified liquid phase growth technique

Low power optical limiting studies on nanocrystalline benzimidazole thin films prepared by modified liquid phase growth technique

Effect of thickness on dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr0.2Ti0.8)O3 thin films

Se-loss-induced CIS Thin Films in RTA Process after Co-sputtering Using CuSe2and InSe2Targets

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Se-loss-induced CIS Thin Films in RTA Process after Co-sputtering Using CuSe₂and InSe₂Targets