2014
DOI: 10.5370/jeet.2014.9.3.1009
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Se-loss-induced CIS Thin Films in RTA Process after Co-sputtering Using CuSe2and InSe2Targets

Abstract: -Chalcopyrite CuInSe 2 (CIS) thin films were prepared without Se-/ S-containing gas by co-sputtering using CuSe 2 and InSe 2 selenide-targets and rapid thermal annealing. The grain size increased to a maximum of 54.68 nm with a predominant (112) plane. The tetragonal distortion parameter η decreased and the inter-planar spacing d (112) increased in the RTA-treated CIS thin films annealed at a 400°C, which indicates better crystal quality. The increased carrier concentration of RTA-treated p-type CIS thin film… Show more

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