Highly selective detection, rapid response (<20 s), and superior sensitivity (Rair/Rgas> 50) against specific target gases, particularly at the 1 ppm level, still remain considerable challenges in gas sensor applications. We propose a rational design and facile synthesis concept for achieving exceptionally sensitive and selective detection of trace target biomarkers in exhaled human breath using a protein nanocage templating route for sensitizing electrospun nanofibers (NFs). The mesoporous WO3 NFs, functionalized with well-dispersed nanoscale Pt, Pd, and Rh catalytic nanoparticles (NPs), exhibit excellent sensing performance, even at parts per billion level concentrations of gases in a humid atmosphere. Functionalized WO3 NFs with nanoscale catalysts are demonstrated to show great promise for the reliable diagnosis of diseases.

In recent years, the integration of two-dimensional (2D) nanomaterials, especially transition metal chalcogendies (TMCs) and dichalcogendies (TMDCs), into electronic devices have been extensively studied owing to their exceptional physical properties such as high transparency, strong photoluminescence, and tunable bandgap depending on the number of layers. Herein, we report the optoelectronic properties of few-layered MoSe 2 -based back-gated phototransistors used for photodetection. The photoresponsivity could be easily controlled to reach a maximum value of 238 AW −1 under near-infrared light excitation, achieving a high specific detectivity D 7.6 10 cm Hz W .Few-layered MoSe 2 exhibited excellent optoelectronic properties compared with those reported previously for multilayered 2D material-based photodetectors, indicating that our device is one of the best high-performance nanoscale nearinfrared photodetectors based on multilayered two-dimensional materials.

Two-dimensional (2D) layered materials exhibit unique optoelectronic properties at atomic thicknesses. In this paper, we fabricated metal-semiconductor-metal based photodetectors using layered gallium selenide (GaSe) with different thicknesses. The electrical and optoelectronic properties of the photodetectors were studied, and these devices showed good electrical characteristics down to GaSe flake thicknesses of 30 nm. A photograting effect was observed in the absence of a gate voltage, thereby implying a relatively high photoresponsivity. Higher values of the photoresponsivity occurred for thicker layers of GaSe with a maximum value 0.57 AW(-1) and external quantum efficiency of of 132.8%, and decreased with decreasing GaSe flake thickness. The detectivity was 4.05 × 10(10) cm Hz(1/2) W(-1) at 532 nm laser wavelength, underscoring that GaSe is a promising p-type 2D material for photodetection applications in the visible spectrum.

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