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2D transition metal chalcogenides (TMCs) and dichalcogenides (TMDCs) are promising candidates for next‐generation electronic devices and sensors. Herein, the fabrication and characterizations of back‐gated Si/SiO2/GaSe‐based (GaSe: gallium selenide) metal–oxide–semiconductor field‐effect transistors (MOSFETs) and top‐gated Gr/h‐BN/GaSe‐based (h‐BN: hexagonal boron nitride) metal–insulator–semiconductor field‐effect transistors (MISFETs) with a common active layer (GaSe) are reported. The morphological, electrical, and optoelectronic properties are investigated, and the device is found to exhibit p‐type behavior with good electrical tunability. At a laser power of 1.147 μW, the device exhibits a photoresponsivity of 90 mA W−1, ION/IOFF ratios exceeding 104, and long decay times. These promising experimental results can promote the application of GaSe‐based MISFETs in multifunctional electronic devices.

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In this study, we fabricated metal–insulator–semiconductor field-effect transistors (MISFETs) based on nanolayered molybdenum diselenide (MoSe2) using two insulator materials, silicon dioxide (SiO2) and silicon nitride (SiN). We performed morphological and electrical characterizations in which the devices showed good electronic performance, such as high mobility and high Ion/Ioff ratios exceeding 104. The subthreshold swing (ss) was somewhat high in all devices owing to the dimensions of our devices. In addition, the transfer curves showed good controllability as a function of gate voltage. The photogating effect was weakened in MoSe2/SiN/Si, indicating that SiN is a good alternative to silicon oxide as a gate dielectric material.

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