Dual‐Gate Graphene/h‐BN/GaSe Metal–Insulator–Semiconductor Field‐Effect Transistor (MISFET)

Abstract

2D transition metal chalcogenides (TMCs) and dichalcogenides (TMDCs) are promising candidates for next‐generation electronic devices and sensors. Herein, the fabrication and characterizations of back‐gated Si/SiO2/GaSe‐based (GaSe: gallium selenide) metal–oxide–semiconductor field‐effect transistors (MOSFETs) and top‐gated Gr/h‐BN/GaSe‐based (h‐BN: hexagonal boron nitride) metal–insulator–semiconductor field‐effect transistors (MISFETs) with a common active layer (GaSe) are reported. The morphological, electrical, and optoelectronic properties are investigated, and the device is found to exhibit p‐type behavior with good electrical tunability. At a laser power of 1.147 μW, the device exhibits a photoresponsivity of 90 mA W−1, ION/IOFF ratios exceeding 104, and long decay times. These promising experimental results can promote the application of GaSe‐based MISFETs in multifunctional electronic devices.

2D Gallium Sulfide-Based 1D Photonic Crystal Biosensor for Glucose Concentration Detection

“…Two-dimensional (2D) materials, consisting of atomically thin layers, are the best candidates for the fabrication of 1D photonic crystals thanks to their unique and tunable optical properties, as previously reported in our research [19][20][21]. Furthermore, they can be easily deposited and controlled in terms of thickness and number of layers, allowing for precise tuning of the photonic bandgap.…”