Effect of Gate Dielectric Material on the Electrical Properties of MoSe2-Based Metal–Insulator–Semiconductor Field-Effect Transistor

Abstract

In this study, we fabricated metal–insulator–semiconductor field-effect transistors (MISFETs) based on nanolayered molybdenum diselenide (MoSe2) using two insulator materials, silicon dioxide (SiO2) and silicon nitride (SiN). We performed morphological and electrical characterizations in which the devices showed good electronic performance, such as high mobility and high Ion/Ioff ratios exceeding 104. The subthreshold swing (ss) was somewhat high in all devices owing to the dimensions of our devices. In addition, the transfer curves showed good controllability as a function of gate voltage. The photogating effect was weakened in MoSe2/SiN/Si, indicating that SiN is a good alternative to silicon oxide as a gate dielectric material.

Optical and Electrical Properties of Low-Dimensional Crystalline Materials

“…Several original contributions studied the optical and electrical properties of different low-dimensional materials. The effect of different gate insulators in MoSe2-based metal-insulator-semiconductor field-effect transistors (MIS-FETs) has been investigated by Abderrahmane et al [2]. They studied the effect of using SiN and SiO 2 as gate insulators in this kind of device.…”