Abstract:In this study, we fabricated metal–insulator–semiconductor field-effect transistors (MISFETs) based on nanolayered molybdenum diselenide (MoSe2) using two insulator materials, silicon dioxide (SiO2) and silicon nitride (SiN). We performed morphological and electrical characterizations in which the devices showed good electronic performance, such as high mobility and high Ion/Ioff ratios exceeding 104. The subthreshold swing (ss) was somewhat high in all devices owing to the dimensions of our devices. In additi… Show more
“…Several original contributions studied the optical and electrical properties of different low-dimensional materials. The effect of different gate insulators in MoSe2-based metal-insulator-semiconductor field-effect transistors (MIS-FETs) has been investigated by Abderrahmane et al [2]. They studied the effect of using SiN and SiO 2 as gate insulators in this kind of device.…”
“…Several original contributions studied the optical and electrical properties of different low-dimensional materials. The effect of different gate insulators in MoSe2-based metal-insulator-semiconductor field-effect transistors (MIS-FETs) has been investigated by Abderrahmane et al [2]. They studied the effect of using SiN and SiO 2 as gate insulators in this kind of device.…”
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